BTA25-600CW3G ON Semiconductor, BTA25-600CW3G Datasheet - Page 2
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BTA25-600CW3G
Manufacturer Part Number
BTA25-600CW3G
Description
IC TRIAC 25A 600V ISO TO220-3
Manufacturer
ON Semiconductor
Type
TRIACr
Datasheet
1.BTA25-600CW3G.pdf
(6 pages)
Specifications of BTA25-600CW3G
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
250A @ 60Hz
Current - On State (it (rms)) (max)
25A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
25A
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Hold Current
50mA
Gate Trigger Current (max)
35mA
Gate Trigger Voltage (max)
1.3V
Package Type
TO-220AB
Peak Repeat Off Current
5uA
Peak Surge On-state Current (max)
250A
On State Voltage(max)
1.55@35AV
Mounting
Through Hole
Pin Count
3 +Tab
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On-State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non−Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On−State Current
Critical Rate of Rise of Off-State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(Gate Open, T
(T
(V
TM
D
D
J
D
= 125°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±100 mA)
= 0.66 x V
= ± 35 A Peak)
DRM
J
DRM
= 125°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 12 V, I
RRM
D
Junction−to−Case (AC)
Junction−to−Ambient
= 12 V, R
G
; Gate Open)
J
= 70 mA, tr ≤ 100 ns)
G
= 125°C)
= 42 mA)
Characteristic
Characteristic
L
= 30 W)
D
(T
= 12 V, R
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
,
c
0.15
0.15
0.15
Min
500
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Value
Typ
260
1.8
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.005
Max
1.55
1.3
1.3
1.3
35
35
35
50
75
75
75
50
3
−
−
−
−
−
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V