ZC835ATA Diodes Zetex, ZC835ATA Datasheet - Page 3

• Manufacturer Part Number: ZC835ATA
• Description: DIODE VAR CAP 68PF 25V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZC835ATA

• Capacitance @ Vr, F: 74.8pF @ 2V, 1MHz
• Capacitance Ratio: 6.5
• Capacitance Ratio Condition: C2/C20
• Voltage - Peak Reverse (max): 25V
• Diode Type: Single
• Q @ Vr, F: 100 @ 3V, 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: ZC835ATR

Tuning characteristics at T
Absolute maximum ratings
Electrical characteristics at T
Issue 11 - January 2007
© Zetex Semiconductors plc 2007
Part
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
Parameter
Forward current
Power dissipation at T
Power dissipation at T
Power dissipation at T
Operating and storage temperature range
Paramater
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of
capacitance
14.25
31.35
44.65
Min.
7.38
7.79
13.5
19.8
20.9
29.7
42.3
61.2
64.6
90.0
95.0
9.0
9.5
amb
amb
amb
Capacitance (pF)
V
= 25°C SOT23
= 25°C SOD323
= 25°C SOD523
R
=2V, f=1MHz
Nom.
amb
100.0
100.0
Conditions
I
V
V
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
R
8.2
8.2
R
R
= 10 A
amb
= 20V
= 3V, f = 1MHz
= 25°C
= 25°C
15.75
34.65
49.35
110.0
105.0
Max.
9.02
8.61
11.0
10.5
16.5
24.2
23.1
36.3
51.7
74.8
71.4
3
Symbol
Min.
P
P
P
25
I
tot
tot
tot
F
f = 50MHz
V
Min Q
R
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
= 3V
Typ.
300
0.2
-55 to +150
Max.
200
330
330
250
Min.
Capacitance ratio
4.3
4.3
4.5
4.5
4.5
4.5
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Max.
400
20
@ f = 1MHz
830 series
C
www.zetex.com
2
/ C
20
ppCm/°C
Max.
Unit
Unit
mW
mW
mW
mA
nA
5.8
5.8
6.0
6.0
6.0
6.0
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
6.5
°C
V