MMBV809LT1 ON Semiconductor, MMBV809LT1 Datasheet - Page 2

• Manufacturer Part Number: MMBV809LT1
• Description: DIODE TUNING SS 20V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBV809LT1

• Capacitance @ Vr, F: 6.1pF @ 2V, 1MHz
• Capacitance Ratio: 2.6
• Capacitance Ratio Condition: C2/C8
• Voltage - Peak Reverse (max): 20V
• Diode Type: Single
• Q @ Vr, F: 75 @ 3V, 500MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBV809LT1OSTR

2. C
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
MMBV809LT1
1000
800
600
400
R
10
9
8
7
6
5
4
3
2
1
0
0.5
is the ratio of C
(I
(V
0
R
R
= 10 mAdc)
= 15 Vdc)
1
V
f = 1.0 MHz
R
Device
= 3.0 Vdc
0.2
2
Figure 1. Diode Capacitance
Figure 3. Series Resistance
V
t
Characteristic − All Types
R
measured at 2.0 Vdc divided by C
3
, REVERSE VOLTAGE (VOLTS)
0.4
4
f, FREQUENCY (GHz)
5
0.6
8
(T
Min
4.5
A
0.8
10
= 25°C unless otherwise noted)
V
TYPICAL CHARACTERISTICS
C
R
t
= 2.0 Vdc, f = 1.0 MHz
, Diode Capacitance
15
1.0
t
http://onsemi.com
measured at 8.0 Vdc.
MMBV809LT1
Typ
5.3
pF
1.2
2
1000
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
100
10
Max
−75
6.1
0.1
Symbol
V
(BR)R
I
R
V
−50
f = 1.0 MHz
R
= 3.0 Vdc
Q, Figure of Merit
V
f = 500 MHz
Figure 4. Diode Capacitance
−25
R
T
Figure 2. Figure of Merit
A
= 3.0 Vdc
, AMBIENT TEMPERATURE (°C)
Min
Typ
20
75
−
f, FREQUENCY (GHz)
0
+25
1.0
Typ
−
−
C
R
f = 1.0 MHz (Note 2)
+50
Min
1.8
, Capacitance Ratio
V
T
Max
A
R
50
−
= 25°C
= 3 Vdc
+75
C
2
/C
8
+100
Max
2.6
nAdc
Unit
Vdc
+125
10