NTMFS5834NLT1G ON Semiconductor, NTMFS5834NLT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS5834NLT1G
• Description: MOSFET N-CH 30V 74A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS5834NLT1G

• Input Capacitance (ciss) @ Vds: 1231pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1800
1600
1400
1200
1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
C
V
I
V
R
Thermal Limit
Package Limit
D
Figure 9. Resistive Switching Time Variation
V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
C
GS
DS(on)
= 20 A
t
C
= 25°C
d(off)
= 32 V
= 4.5 V
= 10 V
oss
V
V
t
DS
DS
t
r
f
Figure 7. Capacitance Variation
Limit
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
C
10
iss
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
1
20
10
10
TYPICAL CHARACTERISTICS
30
V
T
J
GS
= 25°C
http://onsemi.com
= 0 V
t
d(on)
10 ms
100 ms
1 ms
10 ms
dc
100
40
100
4
10
40
30
20
10
50
40
30
20
10
8
6
4
2
0
0
0
0.5
0
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 8. Gate−to−Source Voltage vs. Total
Figure 12. Maximum Avalanche Energy vs.
J
GS
T
gs
= 25°C
J
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
Starting Junction Temperature
0.6
5
50
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Q
gd
0.7
10
75
Charge
Q
T
0.8
100
15
V
T
0.9
125
I
20
DS
D
J
= 20 A
= 25°C
= 20 V
150
1.0
25