NTMFS4826NET3G ON Semiconductor, NTMFS4826NET3G Datasheet - Page 2

• Manufacturer Part Number: NTMFS4826NET3G
• Description: MOSFET N-CH 30V 66A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4826NET3G

• Input Capacitance (ciss) @ Vds: 1850pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 870mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient − t v 10 sec
Junction−to−Top
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
C
I
I
d(ON)
GS(TH)
C
G(TOT)
Q
Q
G(TOT)
GSS
DS(on)
DSS
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
http://onsemi.com
/
J
V
V
V
GS
GS
GS
V
V
V
2
V
GS
= 4.5 V, V
V
= 4.5 V, V
DS
V
GS
= 0 V, f = 1 MHz, V
V
GS
V
GS
V
11.5 V
DS
GS
GS
= 10 V to
DS
= 24 V
= 4.5 V
= 0 V,
Test Condition
= 11.5 V, V
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
R
I
G
D
DS
DS
DS
= 3.0 W
= 30 A
, I
= 15 V, I
D
GS
= 15 V; I
D
= 250 mA
D
DS
= 250 mA
= ±16 V
= 30 A
= 15 V,
T
T
DS
J
I
I
I
I
J
D
D
D
D
D
= 125°C
D
= 25 °C
= 30 A
= 15 A
= 30 A
= 15 A
= 15 A,
= 12 V
= 30 A
Symbol
R
R
R
R
R
qJC
qJA
qJA
qJA
qJT
Min
1.45
30
1850
14.4
39.8
18.6
Typ
13.5
333
170
5.2
25
1.8
4.6
4.3
4.2
6.6
6.5
1.7
5.1
4.5
62
32
Value
143.5
57.8
22.1
3.0
9.7
±100
Max
10
2.5
5.9
8.7
20
1
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
nA
ns
nC
nC
pF
V
V
S