NTMFS4826NET1G ON Semiconductor, NTMFS4826NET1G Datasheet
NTMFS4826NET1G
Specifications of NTMFS4826NET1G
Related parts for NTMFS4826NET1G
NTMFS4826NET1G Summary of contents
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... Microdot may be in either location) I 132 100 A Dmaxpkg T , −40 to ° +150 STG NTMFS4826NET1G I 41 dV/dt 6 V/ns NTMFS4826NET3G EAS 109 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please T 260 °C refer to our Tape and Reel Packaging Specifications L Brochure, BRD8011/D ...
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THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec Junction−to−Top 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted ...
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ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...
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V , GATE−TO−SOURCE VOLTAGE (V) GS Figure 3. On−Resistance vs. Gate−to−Source Voltage 1. 1. ...
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11 100 t d(off d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation ...
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... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...