M48T08Y-10MH1TR STMicroelectronics, M48T08Y-10MH1TR Datasheet - Page 18

• Manufacturer Part Number: M48T08Y-10MH1TR
• Manufacturer: STMicroelectronics

Specifications of M48T08Y-10MH1TR

• Bus Type: Parallel
• User Ram: 8KB
• Operating Supply Voltage (typ): 5V
• Package Type: SOH
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Operating Temperature Classification: Commercial
• Operating Temperature (max): 70C
• Operating Temperature (min): 0C
• Pin Count: 28
• Mounting: Surface Mount
• Date Format: DW:DM:M:Y
• Time Format: HH:MM:SS
• Lead Free Status / RoHS Status: Not Compliant

Clock operations
3.5
18/31
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
10) is recommended in order to provide the needed filtering.
CC
to V
SS
V CC
Doc ID 2411 Rev 10
(cathode connected to V
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
DEVICE
CC
CC
, anode to V
bus. The energy stored in the
M48T08, M48T08Y, M48T18
SS
SS
by as much as
). Schottky diode
AI02169