SI3210-GTR Silicon Laboratories Inc, SI3210-GTR Datasheet - Page 12

• Manufacturer Part Number: SI3210-GTR
• Manufacturer: Silicon Laboratories Inc

Specifications of SI3210-GTR

• Lead Free Status / RoHS Status: Compliant

Si3210/Si3211
Table 5. Monitor ADC Characteristics
(V
12
Table 6. Si321x DC Characteristics, V
(V
Table 7. Si321x DC Characteristics, V
(V
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (Voltage)
Gain Error (Current)
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
DDA
DDA
DDA
, V
,V
,V
DDD
DDD
DDD
Parameter
Parameter
Parameter
= 4.75 to 5.25 V, T
= 3.13 to 3.47 V, T
= 3.13 to 5.25 V, T
A
A
A
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Symbol
DNLE
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
INLE
V
V
V
V
V
V
V
V
I
I
OH
OL
OH
OL
IH
L
IL
IH
L
IL
DIO1,DIO2,SDITHRU: I
DIO1,DIO2,DOUT,SDITHRU:
DIO1,DIO2,DOUT,SDITHRU:
SDO,INT,DTX:I
DDA
DIO1,DIO2,SDITHRU:
DDA
SDO,INT,DTX:I
DOUT: I
SDO, DTX:I
Test Condition
Test Condition
I
DTX:I
O
DOUT: I
Test Condition
= –4 mA SDO,
= V
= V
I
O
I
O
= 4 mA
O
O
DDD
Rev. 1.45
DDD
= –8 mA
= 2 mA
= –40 mA
O
= –40 mA
O
O
= 5.0 V
= 3.3 V
= –4 mA
= 8 mA
O
= 4 mA
O
=–2 mA
0.7 x V
V
V
DDD
DDD
0.7 x V
V
V
–1/2
Min
Min
–10
–1
DDD
DDD
—
—
—
—
– 0.6
– 0.8
Min
–10
—
—
DDD
– 0.6
– 0.8
DDD
Typ
Typ
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.3 x V
0.3 x V
Max
Max
Max
1/2
10
20
0.4
0.4
10
—
—
—
—
—
—
10
1
DDD
DDD
Unit
LSB
LSB
Unit
Unit
%
%
µA
µA
V
V
V
V
V
V
V
V
V
V