FMMT734TA Diodes Zetex, FMMT734TA Datasheet

FMMT734TA

Manufacturer Part Number

FMMT734TA

Description

Trans Darlington PNP 100V 0.8A 3-Pin SOT-23 T/R

Manufacturer

Diodes Zetex

Type

PNPr

Datasheet

1.FMMT734TA.pdf (3 pages)

Specifications of FMMT734TA

Package

3SOT-23

Configuration

Single

Peak Dc Collector Current

0.8 A

Maximum Base Emitter Saturation Voltage

1.75@5mA@1A V

Maximum Collector Emitter Saturation Voltage

0.75@1mA@100mA|0.8@1mA@250mA|0.86@5mA@500mA|0.97@5mA@800mA|1.05@5mA@1A V

Maximum Collector Cut-off Current

0.01 uA

Maximum Collector Emitter Voltage

100 V

Minimum Dc Current Gain

20000@100mA@5V|15000@1A@5V|5000@2A@5V

Transistor Type

PNP - Darlington

Current - Collector (ic) (max)

800mA

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

1.05V @ 5mA, 1A

Current - Collector Cutoff (max)

200nA

Dc Current Gain (hfe) (min) @ Ic, Vce

20000 @ 100mA, 5V

Power - Max

625mW

Frequency - Transition

140MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Polarity

PNP

Number Of Elements

Collector-emitter Voltage

100V

Collector-base Voltage(max)

100V

Emitter-base Voltage (max)

12V

Base-emitter Saturation Voltage (max)

1.75@5mA@1A

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-23

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FMMT734TR
UFMMT734TA
UFMMT734TR
UFMMT734TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FMMT734TA

Manufacturer:

ZETEX

Quantity:

3 000

Current page: 1 of 3
Download datasheet (81Kb)

“SUPER SOT” SOT23 PNP SILICON

POWER DARLINGTON TRANSISTOR

ISSUE 1 – AUGUST 1997

FEATURES

COMPLEMENTARY TYPE – FMMT634

PARTMARKING DETAIL – 734

ABSOLUTE MAXIMUM RATINGS.

* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic

**Measured under pulsed conditions. Pulse width=300 s. Duty cycle

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

Operating and Storage Temperature Range

substrate measuring 15x15x0.6mm

625mW POWER DISSIPATION

Very High h

Extremely Low V

at High Current (5A)

CE(sat)

at High Current (1A)

SYMBOL

tot

CBO

CEO

EBO

stg

-55 to +150

VALUE

-100

-800

625

-12

-5

FMMT734

SOT23

UNIT

°C

Related parts for FMMT734TA

FMMT734TA Summary of contents

Page 1

SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High h at High Current (5A Extremely Low V CE(sat) COMPLEMENTARY TYPE – FMMT634 PARTMARKING DETAIL – 734 ...

Page 2

FMMT734 ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL Collector-Base V (BR)CBO Breakdown Voltage Collector-Emitter V (BR)CEO Breakdown Voltage Emitter-Base V (BR)EBO Breakdown Voltage Collector Cut-Off I CBO Current Emitter Cut-Off I EBO Current Collector Emitter I CES Cut-Off Current Collector-Emitter V ...

Page 3

TYPICAL CHARACTERISTICS 1.6 +25°C 1.2 IC/IB=100 IC/IB=500 IC/IB=1000 IC/IB=5000 0.8 0.4 0 10mA 100mA 1mA I -Collector Current CE(sat) C 150K VCE=5V +100°C 100K +25°C 50K -55°C 0 10mA 100mA 1mA I -Collector Current C h ...

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