DMJT9435-13 Diodes Zetex, DMJT9435-13 Datasheet - Page 2

• Manufacturer Part Number: DMJT9435-13
• Description: Trans GP BJT PNP 30V 2A 4-Pin (3+Tab) SOT-223 T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of DMJT9435-13

• Package: 4SOT-223
• Supplier Package: SOT-223
• Pin Count: 4
• Minimum Dc Current Gain: 125@0.8A@1V|110@1.2A@1V|90@3A@1V
• Maximum Operating Frequency: 160(Typ) MHz
• Maximum Dc Collector Current: 2 A
• Maximum Base Emitter Saturation Voltage: 1.25@300mA@3A V
• Maximum Collector Emitter Saturation Voltage: 0.21@20mA@0.8A|0.275@20mA@1.2A|0.55@300mA@3A V
• Maximum Collector Base Voltage: 45 V
• Maximum Collector Emitter Voltage: 30 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DMJT9435
Document number: DS31622 Rev. 2 - 2
2.0
1.6
1.2
0.8
0.4
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE ( C)
Characteristic
A
50
Note 3
75
@T
A
100
= 25°C unless otherwise specified
Note 4
°
125
V
V
Symbol
V
R
V
V
150
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
I
I
BE(ON)
C
C
h
www.diodes.com
CER
EBO
t
t
t
on
t
off
t
f
t
obo
FE
ibo
d
s
T
r
f
2 of 4
Min
125
110
-30
90
-6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.0
0.8
0.6
0.4
0.2
0
-100
-250
Typ
160
140
200
110
155
100
83
45
90
55
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-1.25
-200
-210
-275
-550
Max
-1.1
4
183
150
⎯
⎯
⎯
⎯
⎯
⎯
-20
-10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I = -1mA
I = -5mA
I = -3mA
I = -2mA
B
I = -4mA
B
B
B
B
MHz
Unit
mΩ
ns
ns
ns
ns
ns
ns
μA
mV
μA
μA
pF
pF
8
⎯
V
V
V
V
I
I
V
V
T
V
V
V
V
I
I
I
I
I
V
V
f = 100MHz
V
V
V
I
V
I
C
E
C
C
C
C
C
B1
B1
A
CB
CB
EB
CE
CE
CE
CE
CE
CB
EB
CC
CC
= -10mA
= -50μA
= -0.8A, I
= -1.2A, I
= -3A, I
= -3.0A, I
= -3A, I
= 125°C
= -20mA
= I
12
= -25V, R
= -25V, R
= -5V, I
= -1V, I
= -1V, I
= -1V, I
= -4V, I
= -10V, I
= -10V, f = 1MHz
= -8V, f = 1MHz
= -15V, I
= -15V, I
B2
Test Conditions
= -20mA
B
B
= -300mA
= -300mA
C
C
C
C
B
B
B
C
C
C
C
= 0
= -20mA
= -20mA
= -300mA
16
= -0.8A
= -1.2A
= -3A
= -1.2A
BE
BE
DMJT9435
= -1.2A,
= -100mA,
= -1.2A,
= 200Ω
= 200Ω,
© Diodes Incorporated
December 2008
20