DNLS160-7 Diodes Zetex, DNLS160-7 Datasheet - Page 2

• Manufacturer Part Number: DNLS160-7
• Description: Trans GP BJT NPN 60V 1A 3-Pin SOT-23 T/R
• Manufacturer: Diodes Zetex
• Type: NPNr

Specifications of DNLS160-7

• Package: 3SOT-23
• Supplier Package: SOT-23
• Pin Count: 3
• Minimum Dc Current Gain: 250@1mA@5V|200@500mA@5V|100@1A@5V
• Maximum Operating Frequency: 270(Typ) MHz
• Maximum Dc Collector Current: 1 A
• Maximum Base Emitter Saturation Voltage: 1.1@50mA@1A V
• Maximum Collector Emitter Saturation Voltage: 0.11@1mA@100mA|0.14@50mA@500mA|0.25@100mA@1A V
• Maximum Collector Base Voltage: 80 V
• Maximum Collector Emitter Voltage: 60 V
• Maximum Emitter Base Voltage: 5 V

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
DS31390 Rev. 3 - 2
250
300
200
150
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
50
0
0
Characteristic
25
Fig. 1 Maximum Power Dissipation vs.
T , AMBIENT TEMPERATURE (°C)
A
Ambient Temperature
50
75
@T
A
100
= 25°C unless otherwise specified
125
V
V
V
V
R
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
I
h
CBO
CES
EBO
f
FE
obo
150
T
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Min
250
200
100
150
80
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
0.91
0.81
Typ
320
280
165
140
140
270
⎯
⎯
⎯
⎯
⎯
⎯
80
80
7
Max
100
100
100
110
140
250
250
1.1
0.9
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MHz
Fig. 2 Typical Collector Current vs.
Unit
mΩ
mV
nA
μA
nA
nA
pF
V
V
V
V
V
V
Collector-Emitter Voltage
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
E
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
CE
= 100μA, I
= 1A, I
= 1A, I
= 1A, I
= 100μA, I
= 10mA, I
= 100mA, I
= 500mA, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 60V, I
= 60V, I
= 60V, V
= 10V, f = 1.0MHz
= 10V, I
B
B
B
= 100mA
= 100mA
= 50mA
C
C
C
C
C
Test Condition
B
E
E
C
= 0
E
C
= 1mA
= 500mA
= 1A
= 1A
BE
B
B
= 0
= 0
= 0, T
= 50mA, f = 100MHz
= 0
= 0
= 1mA
= 50mA
= 0
A
= 150°C
© Diodes Incorporated
DNLS160