MCP1703T-3302E/DB Microchip Technology, MCP1703T-3302E/DB Datasheet - Page 13
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MCP1703T-3302E/DB
Manufacturer Part Number
MCP1703T-3302E/DB
Description
Low Iq 250mA LDO, Vin 16V Max, Vout =3.3V 3 SOT-223 T/R
Manufacturer
Microchip Technology
Datasheet
1.SOT89-3EV-VREG.pdf
(28 pages)
Specifications of MCP1703T-3302E/DB
Regulator Topology
Positive Fixed
Voltage - Output
3.3V
Voltage - Input
Up to 16V
Voltage - Dropout (typical)
0.525V @ 250mA
Number Of Regulators
1
Current - Output
250mA (Min)
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Limit (min)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MCP1703T-3302E/DBTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP1703T-3302E/DB
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
6.0
6.1
The MCP1703 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
6.1.1
6.2
6.2.1
The internal power dissipation of the MCP1703 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x V
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The
temperature specified for the MCP1703 is +125
estimate the internal junction temperature of the
MCP1703, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
ambient for the SOT-23A pin package is estimated at
336
2010 Microchip Technology Inc.
Where:
I
50 mA
OUT
V
Input Voltage Range = 2.7V to 4.8V
°
P
V
1.8V
V
OUT(MIN)
C/W.
LDO
OUT
IN(MAX)
maximum
P
APPLICATION CIRCUITS &
ISSUES
Typical Application
Power Calculations
LDO
Package Type = SOT-23A
=
V
IN
APPLICATION INPUT CONDITIONS
V
POWER DISSIPATION
IN
JA
OUT
). The following equation can be used to
V
). The thermal resistance from junction to
maximum = 4.8V
IN MAX
= LDO Pass device internal power
= Maximum input voltage
= LDO minimum output voltage
C
1 µF Ceramic
OUT
typical = 1.8V
GND
V
dissipation
OUT
I
continuous
OUT
MCP1703
Typical Application Circuit.
–
V
= 50 mA maximum
OUT MIN
V
IN
operating
I
V
2.7V to 4.8V
IN
1 µF Ceramic
C
OUT MAX
IN
junction
°
C
.
To
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Where:
Where:
Where:
Where:
P
T
T
T
T
T
P
P
T
D(MAX)
A(MAX)
J(RISE)
J(RISE)
J(MAX)
J(MAX)
TOTAL
TOTAL
AMAX
R
R
R
T
T
JA
JA
JA
A
J
T
J MAX
P
= Maximum continuous junction
= Total device power dissipation
= Thermal resistance from
= Maximum ambient temperature
D MAX
= Maximum device power dissipation
= Maximum continuous junction
= Maximum ambient temperature
= Thermal resistance from
= Rise in device junction temperature
= Maximum device power dissipation
= Thermal resistance from junction to
= Junction Temperature
= Rise in device junction temperature
= Ambient temperature
T
J RISE
temperature
junction-to-ambient
temperature
junction-to-ambient
over the ambient temperature
ambient
over the ambient temperature
T
=
J
=
P
=
TOTAL
=
---------------------------------------------------
T
T
P
J RISE
J MAX
D MAX
MCP1703
R
R
+
–
JA
JA
T
T
A
A MAX
R
+
DS22049E-page 13
T
JA
AMAX