MCP6072T-E/SN Microchip Technology, MCP6072T-E/SN Datasheet - Page 3

• Manufacturer Part Number: MCP6072T-E/SN
• Description: Dual 1.8V 1.2MHz Op Amp, E Temp 8 SOIC 3.90mm (.150") T/R
• Manufacturer: Microchip Technology

Specifications of MCP6072T-E/SN

• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 0.5 V/µs
• Gain Bandwidth Product: 1.2MHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 150µV
• Current - Supply: 110µA
• Current - Output / Channel: 28mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.0
1.1
V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
All Other Inputs and Outputs ......... V
Difference Input Voltage ...................................... |V
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
ESD protection on all pins (HBM; MM) ................ ≥ 4 kV; 400V
1.2
TABLE 1-1:
© 2010 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, V
V
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
Note 1:
DD
OUT
– V
≈ V
SS
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Specifications
........................................................................7.0V
DD
Figure 2-13
/2, V
Parameters
IN
+
L
, V
DC ELECTRICAL SPECIFICATIONS
= V
IN
-
)†† .......... V
DD
shows how V
/2 and R
J
) .......................... +150°C
SS
SS
L
= 10 kΩ to V
– 1.0V to V
– 0.3V to V
CMR
ΔV
ΔV
CMRR
PSRR
V
V
changed across temperature.
Z
Sym
V
OS
OS
Z
I
DIFF
CMR
CMR
OS
I
I
I
CM
OS
B
B
B
/ΔT
/ΔT
DD
DD
DD
L
+ 1.0V
+ 0.3V
A
A
– V
. (Refer to
SS
V
V
SS
|
SS
-150
Min
70
72
74
72
74
—
—
—
—
—
—
—
—
−0.15
−0.3
DD
Figure
= +1.8V to +6.0V, V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
†† See
10
10
1100
±1.5
±4.0
±1.0
±1.0
Typ
87
60
89
91
87
89
—
—
—
13
13
1-1).
||6
||6
4.1.2 “Input Voltage Limits”
V
V
DD
DD
+150
5000
Max
100
—
—
—
—
—
—
—
—
—
—
—
+0.15
+0.3
SS
= GND, T
µV/°C T
µV/°C T
MCP6071/2/4
Units
Ω||pF
Ω||pF
µV
dB
pA
pA
pA
pA
dB
dB
dB
dB
V
V
V
V
V
V
V
T
T
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
DD
CM
DD
DD
CM
DD
DD
CM
DD
CM
DD
CM
DD
CM
DD
= -40°C to +85°C,
= +85°C to +125°C,
= +25°C, V
= +85°C
= +125°C
= 1.8V
= 6.0V
= 1.8V
= 6.0V
= 6.0V
= 6.0V
= 3.0V,
= 3.0V, V
= 3.0V, V
= -0.15V to 1.95V,
= -0.3V to 6.3V,
= 3.0V to 6.3V,
= -0.3V to 3.0V,
= V
= V
Conditions
DD
SS
DS22142B-page 3
/3
(Note
(Note
CM
CM
CM
= V
= V
= V
1)
1)
DD
DD
DD
/2,
/3
/3