MCP73832T-4ADI/OT Microchip Technology, MCP73832T-4ADI/OT Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
MCP73832T-4ADI/OT
Manufacturer Part Number
MCP73832T-4ADI/OT
Description
IC,Battery Management,TSOP,5PIN,PLASTIC
Manufacturer
Microchip Technology
Datasheet
1.MCP73831T-2DCIOT.pdf
(28 pages)
Specifications of MCP73832T-4ADI/OT
Function
Charge Management
Battery Type
Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
Voltage - Supply
3.75 V ~ 6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Product
Charge Management
Output Voltage
4.4 V
Output Current
15 mA to 500 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
TC110DM - BOARD EVAL BATT CHARGER TC110
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP73832T-4ADI/OT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP73831/2
DC CHARACTERISTICS (CONTINUED)
DS21984E-page 4
Electrical Specifications: Unless otherwise indicated, all limits apply for V
Typical values are at +25°C, V
Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)
Precondition Current
Ratio
Precondition Voltage
Threshold Ratio
Precondition Hysteresis
Charge Termination
Charge Termination
Current Ratio
Automatic Recharge
Recharge Voltage
Threshold Ratio
Pass Transistor ON-Resistance
ON-Resistance
Battery Discharge Current
Output Reverse Leakage
Current
Status Indicator – STAT
Sink Current
Low Output Voltage
Source Current
High Output Voltage
Input Leakage Current
PROG Input
Charge Impedance
Range
Minimum Shutdown
Impedance
Automatic Power Down
Automatic Power Down
Entry Threshold
Automatic Power Down
Exit Threshold
Thermal Shutdown
Die Temperature
Die Temperature
Hysteresis
Note 1:
Parameters
Not production tested. Ensured by design.
V
V
I
I
I
PREG
TERM
DISCHARGE
V
PTH
RTH
DD
I
V
T
SOURCE
R
R
PDENTER
R
V
Sym.
I
PDEXIT
SDHYS
V
V
T
DSON
SINK
PROG
PROG
PHYS
I
= [V
LK
OH
SD
/ V
/ V
OL
/ I
/ I
REG
REG
REG
REG
REG
(typical) + 1.0V]
V
+20 mV)
DD
Min.
3.75
91.5
7.5
5.6
8.5
<(V
15
30
64
69
15
94
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
BAT
V
V
+150 mV)
+50 mV)
V
DD
DD
DD
Typ.
66.5
71.5
94.0
96.5
0.15
0.25
0.15
0.03
100
350
-5.5
150
110
7.5
0.4
<(V
<(V
10
20
40
10
20
10
—
—
—
—
5
-0.4
BAT
BAT
DD
= [V
V
+200 mV)
DD
V
Max.
REG
12.5
6.25
96.5
11.5
DD
200
-15
9.4
<(V
25
50
—
69
74
—
25
99
—
25
35
67
—
—
—
2
2
2
1
1
- 1
(typical) + 0.3V] to 6V, T
BAT
Units
mV
mΩ
mA
mA
µA
µA
µA
µA
µA
kΩ
kΩ
°C
°C
%
%
%
%
%
%
%
%
%
%
%
%
V
V
© 2008 Microchip Technology Inc.
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
No Preconditioning
T
V
V
V
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
PROG = 2.0 kΩ to 10 kΩ
T
V
V
V
PROG Floating
V
V
Charge Complete
I
I
High-Impedance
3.5V ≤ V
V
3.5V ≤ V
V
SINK
SOURCE
A
A
BAT
BAT
BAT
BAT
BAT
DD
DD
DD
DD
DD
= -5°C to +55°C
= -5°C to +55°C
= 3.75V, T
Floating
< V
Falling
Rising
Low-to-High
Low-to-High
High-to-Low
High-to-Low
High-to-Low
= 4 mA
STOP
A
BAT
BAT
Conditions
= 4 mA (MCP73831)
= -40°C to +85°C.
≤ V
≤ V
J
REG
REG
= 105°C