NTMFS4934NT1G ON Semiconductor, NTMFS4934NT1G Datasheet

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NTMFS4934NT1G

Manufacturer Part Number
NTMFS4934NT1G
Description
NFET SO8FL 30V 147A 2MOHM
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of NTMFS4934NT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17.1A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 4.5V
Input Capacitance (ciss) @ Vds
5505pF @ 15V
Power - Max
930mW
Mounting Type
Surface Mount
Package / Case
5-DFN, SO8 FL
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4934NT1G
Manufacturer:
ON Semiconductor
Quantity:
950
Part Number:
NTMFS4934NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS4934N
Power MOSFET
30 V, 147 A, Single N−Channel, SO−8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 2
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain Current
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L
Compliant
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CPU Power Delivery, DC−DC Converters
qJA
qJA
qJA
qJC
= 37 A
(Note 1)
≤ 10 s (Note 1)
(Note 2)
(Note 1)
DS(on)
pk
J
qJA
qJA
qJA
qJC
= 25°C, V
, L = 0.3 mH, R
≤ 10 s
to Minimize Conduction Losses
Parameter
DD
= 24 V, V
Steady
(T
T
State
G
A
J
= 25 W
= 25°C, t
= 25°C unless otherwise stated)
GS
T
T
T
T
T
T
T
T
T
T
T
T
T
A
A
A
= 10 V,
C
A
A
A
A
A
A
C
C
p
A
= 100°C
= 100°C
= 100°C
=100°C
= 10 ms
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Symbol
I
V
T
dV/d
V
Dmax
E
I
T
P
P
P
P
DSS
DM
STG
T
I
I
I
I
I
GS
AS
D
D
D
D
S
J
D
D
D
D
L
,
t
−55 to
Value
69.44
+150
29.1
18.4
2.72
47.5
30.0
7.23
17.1
10.8
0.93
±20
147
442
100
205
260
30
93
68
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
W
V
V
A
A
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS4934NT1G
NTMFS4934NT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SO−8 FLAT LEAD
V
(BR)DSS
CASE 488AA
30 V
A
Y
WW
G
(Note: Microdot may be in either location)
Device
STYLE 1
G (4)
ORDERING INFORMATION
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
N−CHANNEL MOSFET
3.0 mW @ 4.5 V
2.0 mW @ 10 V
R
D (5,6)
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8 FL
SO−8 FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
NTMFS4934N/D
AYWWG
Tape & Reel
Tape & Reel
4934N
Shipping
D
D
1500 /
5000 /
I
G
D
147 A
MAX
D
D

Related parts for NTMFS4934NT1G

NTMFS4934NT1G Summary of contents

Page 1

... A Dmax T , −55 to ° +150 STG Device dV/d 6 V/ns NTMFS4934NT1G t E 205 mJ AS NTMFS4934NT3G T 260 °C L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R MAX ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

T 3 160 140 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.0028 0.0026 0.0024 0.0022 0.0020 0.0018 0.0016 0.0014 ...

Page 5

C iss 5000 4000 3000 C oss 2000 1000 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 260 240 220 200 180 160 140 120 100 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 t, ...

Page 7

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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