PIC24HJ256GP610A-E/PF Microchip Technology, PIC24HJ256GP610A-E/PF Datasheet - Page 64
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PIC24HJ256GP610A-E/PF
Manufacturer Part Number
PIC24HJ256GP610A-E/PF
Description
16 Bit MCU 40MIPS 256KB FLASH 100 TQFP 14x14x1mm TRAY
Manufacturer
Microchip Technology
Series
PIC® 24Hr
Datasheets
1.PIC24HJ12GP201-ISO.pdf
(84 pages)
2.PIC24HJ64GP206A-IMR.pdf
(304 pages)
3.PIC24HJ256GP206A-IMR.pdf
(8 pages)
Specifications of PIC24HJ256GP610A-E/PF
Core Processor
PIC
Core Size
16-Bit
Speed
40 MIPs
Connectivity
CAN, I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
85
Program Memory Size
256KB (85.5K x 24)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 32x10b/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
100-TQFP
Processor Series
PIC24HJ
Core
PIC
Data Bus Width
16 bit
Data Ram Size
16 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
85
Number Of Timers
9
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52713-733, 52714-737, 53276-922, EWDSPIC
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
2 (12 bit, 32 Channel)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC24HJ256GP610A-E/PF
Manufacturer:
Microchip Technology
Quantity:
10 000
- PIC24HJ12GP201-ISO PDF datasheet
- PIC24HJ64GP206A-IMR PDF datasheet #2
- PIC24HJ256GP206A-IMR PDF datasheet #3
- Current page: 64 of 304
- Download datasheet (3Mb)
PIC24HJXXXGPX06A/X08A/X10A
5.4.1
The user can program one row of program Flash
memory at a time. To do this, it is necessary to erase
the 8-row erase page that contains the desired row.
The general process is:
1.
2.
3.
EXAMPLE 5-1:
DS70592B-page 64
; Set up NVMCON for block erase operation
; Init pointer to row to be ERASED
Note:
Read
(512 instructions) and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase the page (see Example 5-1):
a)
b)
c)
d)
e)
f)
Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE (NVMCON<6>) and WREN
(NVMCON<14>) bits.
Write the starting address of the page to be
erased into the TBLPAG and W registers.
Perform a dummy table write operation
(TBLWTL) to any address within the page
that needs to be erased.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
A program memory page erase operation
is set up by performing a dummy table
write (TBLWTL) operation to any address
within the page. This methodology is dif-
ferent from the page erase operation on
dsPIC30F/33F devices in which the erase
page was selected using a dedicated pair
of registers (NVMADRU and NVMADR).
eight
#0x4042, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
rows
ERASING A PROGRAM MEMORY PAGE
of
program
memory
Preliminary
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA<15:0> pointer
; Set base address of erase block
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as shown
in Example 5-3.
Write the first 64 instructions from data RAM into
the program memory buffers (see Example 5-2).
Write the program block to Flash memory:
a)
b)
c)
d)
Repeat steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash memory.
Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash mem-
ory is done, the WR bit is cleared
automatically.
2009 Microchip Technology Inc.
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