S29GL512P11FFI012 Spansion Inc., S29GL512P11FFI012 Datasheet - Page 65

• Manufacturer Part Number: S29GL512P11FFI012
• Description: IC 512M PAGE-MODE FLASH MEMORY
• Manufacturer: Spansion Inc.

Specifications of S29GL512P11FFI012

• Cell Type: NOR
• Density: 512Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26/25Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: Fortified BGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 64M/32M
• Supply Current: 110mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / Rohs Status: Compliant

Notes
1. Not 100% tested.
2. See
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with V
November 20, 2009 S29GL-P_00_A12
JEDEC
t
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
t
11.7.4
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
ELAX
ELEH
EHEL
AVAV
Parameter
DC Characteristics on page 56
t
t
WHWH1
WHWH2
t
t
t
t
CEPH
OEPH
t
Std.
t
GHEL
t
t
t
t
ASO
t
AHT
t
t
t
CPH
WC
WS
WH
AH
DS
DH
CP
AS
S29GL-P Alternate CE# Controlled Erase and Program Operations
Description
(Notes)
Write Cycle Time
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high during toggle bit polling
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
OE# High during toggle bit polling
Read Recovery Time Before Write
(OE# High to CE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program Operation (Notes 2, 4)
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Program Operation
Accelerated Programming Operation
Sector Erase Operation
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
for more information.
(Note 1)
(Note 2)
(Note 2)
D a t a
S29GL-P MirrorBit
IO
(Note 2)
S h e e t
= 1.8 V and V
CC
®
Flash Family
= 3.0 V.
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
90
90
100
100
Speed Options
13.5
480
110
110
0.5
15
45
30
20
20
35
30
15
60
54
0
0
0
0
0
0
120
120
130
130
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
ns
65