SST25VF040B-80-4I-SAE-T Microchip Technology, SST25VF040B-80-4I-SAE-T Datasheet - Page 15

• Manufacturer Part Number: SST25VF040B-80-4I-SAE-T
• Description: 2.7V To 3.6V 4Mbit SPI Serial Flash 8 SOIC 3.90mm (.150") T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF040B-80-4I-SAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4 Mbit SPI Serial Flash
SST25VF040B
4-KByte Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4
KByte sector to FFH. A Sector-Erase instruction applied to
a protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE# must remain active low for the duration of
any command sequence. The Sector-Erase instruction is
initiated by executing an 8-bit command, 20H, followed by
address bits [A
©2009 Silicon Storage Technology, Inc.
FIGURE 12: Sector-Erase Sequence
23
-A
0
]. Address bits [A
SCK
CE#
SO
SI
MODE 3
MODE 0
MS
-A
12
] (A
MSB
0 1 2 3 4 5 6 7 8
MS
= Most
20
HIGH IMPEDANCE
15
MSB
Significant address) are used to determine the sector
address (SA
CE# must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status regis-
ter or wait T
Sector-Erase cycle. See Figure 12 for the Sector-Erase
sequence.
ADD.
15 16
ADD.
SE
X
), remaining address bits can be V
23 24
for the completion of the internal self-timed
1295 SecErase.0
ADD.
31
S71295-05-000
Data Sheet
IL
or V
10/09
IH.