SST39VF800A-70-4I-M1QE-T Microchip Technology, SST39VF800A-70-4I-M1QE-T Datasheet - Page 13

• Manufacturer Part Number: SST39VF800A-70-4I-M1QE-T
• Description: 2.7V To 3.6V 8Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm T/R
• Manufacturer: Microchip Technology

Specifications of SST39VF800A-70-4I-M1QE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-WFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
AC CHARACTERISTICS
TABLE 14: Read Cycle Timing Parameters V
TABLE 15: Read Cycle Timing Parameters V
©2010 Silicon Storage Technology, Inc.
Symbol Parameter
T
T
T
T
T
T
T
T
T
Symbol Parameter
T
T
T
T
T
T
T
T
T
RC
CE
AA
OE
CLZ
OLZ
CHZ
OHZ
OH
RC
CE
AA
OE
CLZ
OLZ
CHZ
OHZ
OH
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
1
1
1
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
DD
DD
= 2.7-3.6V
= 3.0-3.6V
13
SST39LF200A/400A/800A-55
SST39VF200A/400A/800A-70
Min
Min
55
70
0
0
0
0
0
0
Max
Max
S71117-13-000
55
55
30
15
15
70
70
35
20
20
Data Sheet
T15.7 1117
T14.7 1117
Units
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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