STK12C68-5L35M Cypress Semiconductor Corp, STK12C68-5L35M Datasheet - Page 8

STK12C68-5L35M

STK12C68-5L35M

Manufacturer Part Number
STK12C68-5L35M
Description
STK12C68-5L35M
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of STK12C68-5L35M

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
64K (8K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Package / Case
28-LCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Retention and Endurance
Capacitance
In the following table, the capacitance parameters are listed.
Thermal Resistance
In the following table, the thermal resistance parameters are listed.
AC Test Conditions
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% to 90%) ...................... <5 ns
Input and Output Timing Reference Levels .......................1.5
Document Number: 001-51026 Rev. **
DATA
NV
C
C
Note
6. These parameters are guaranteed by design and are not tested.
IN
OUT
Parameter
Parameter
Parameter
C
Output
Θ
Θ
R
JC
JA
5.0V
Data Retention
Nonvolatile STORE Operations
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
30 pF
Description
Description
Description
R1 963Ω
T
V
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA / JESD51.
A
CC
Figure 7. AC Test Loads
512Ω
= 25°C, f = 1 MHz,
R2
= 0 to 3.0 V
[6]
Test Conditions
[6]
Output
Test Conditions
5.0V
1,000
Min
100
STK12C68-5 (SMD5962-94599)
5 pF
R1 963Ω
28-CDIP 28-LCC
TBD
TBD
For Tri-state Specs
Max
512Ω
8
7
TBD
TBD
R2
Years
Unit
K
Page 8 of 18
°C/W
°C/W
Unit
Unit
pF
pF
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