TCZT8020-PAER Vishay, TCZT8020-PAER Datasheet - Page 3

• Manufacturer Part Number: TCZT8020-PAER
• Description: IC,Reflective Detector,1-CHANNEL,LED-7c
• Manufacturer: Vishay

Specifications of TCZT8020-PAER

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 0.025 % (Typ)
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
(1)
BASIC CHARACTERISTICS (T
Document Number: 83774
Rev. 1.7, 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
BASIC CHARACTERISTICS (T
PARAMETER
COUPLER
Collector current
I
Collector emitter saturation
voltage
Cut-off frequency
INPUT (EMITTER)
Forward voltage
Radiant intensity
Peak wavelength
Virtual source diameter
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
SWITCHING CHARACTERISTICS
Turn-on time
Turn-off time
C
Characteristics are measurement with d = 4 mm (0.55") distance between emitter and detector, within a common axis of 0.5 mm (0.02") and
with parallel alignment within 5°
/I
F
96 11862
1000
Fig. 2 - Forward Current vs. Forward Voltage
100
0.1
10
1
0
0.4
V
F
- Forward Voltage (V)
0.8
V
V
V
V
CE
1.2
For technical questions, contact:
CE
S
S
V
CE
= 5 V, I
= 5 V, I
= 5 V, I
DIN EN ISO 1146/1:2005
= 5 V, I
I
amb
I
I
F
F
F
= 25 V, I
TEST CONDITION
amb
= 60 mA, t
= 20 mA, I
= 10 mA, V
1.6
(see figure 10)
(see figure 10)
= 25 °C, unless otherwise specified)
I
F
C
C
R
I
I
F
E
F
I
F
This datasheet is subject to change without notice.
Matched Pairs of Emitters and
= 20 mA, d = 4 mm
= 25 °C, unless otherwise specified)
C
L
= 100 mA
= 1 mA, R
= 1 mA, R
= 100 μA
= 20 mA, d = 4 mm
= 50 mA
= 100 
= 1 mA
F
2.0
= 0 A, E = 0 lx
C
P
CE
= 20 ms
= 25 μA
= 5 V,
L
L
= 100 
= 100 
Detectors
(1)
[e-mail]
SYMBOL
V
V
V
CTR
I
CEsat
CEO
t
t
V

CEO
ECO
I
f
I
Fig. 3 - Relative Current Transfer Ratio vs. Ambient Temperature
d
on
off
C
C
e
P
F
95 11097
2.0
1.5
1.0
0.5
MIN.
0
- 25
0.25
1.25
940
70
7
T
amb
0
Vishay Semiconductors
- Ambient Temperature (°C)
TYP.
1.25
110
0.5
2.5
1.1
15
10
25
www.vishay.com/doc?91000
MAX.
V
I
d = 4 mm
F
100
0.4
1.6
7.8
CE
50
= 20 mA
TCZT8020
= 5 V
www.vishay.com
75
mW/sr
UNIT
kHz
mm
mA
nm
nA
μs
μs
%
V
V
V
V
3