TSDF72830YS-GS08 Vishay, TSDF72830YS-GS08 Datasheet

TSDF72830YS-GS08

Manufacturer Part Number
TSDF72830YS-GS08
Description
Manufacturer
Vishay
Datasheet

Specifications of TSDF72830YS-GS08

Mounting
Surface Mount
Pin Count
6
Lead Free Status / RoHS Status
Compliant
Dual - MOSMIC
with Integrated Band Switch for One-Line Switching
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Description
The Dual-MOSMIC
the well-known SOT-363 plastic package, is a combi-
nation of two different MOSMIC
mon Source and common Gate 2 leads and an
integrated switch. One of the MOSMIC stages is opti-
mized for use in VHF applications, especially regard-
ing cross modulation performance and noise figure at
lower VHF frequencies, whereas the other stage is
optimized for use in UHF applications regarding gain
and noise figure performance at higher frequencies of
UHF range. The integrated switch is operated by the
Gate 1 bias of the UHF amplifier on Pin 3. All of the
Gates are protected against excessive input voltage
surges by integrated antiserial diodes between them-
selves and Source. Drain output pin of each stage
is opposite to corresponding Gate 1 input pin
what is called SOT-363L pin configuration with
Vishay.
Features
Document Number 85176
Rev. 1.1, 02-May-05
• Two differently optimized amplifiers in a
• Internal switch for saving lines on PCB layout as
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
single package. One of them has a fully
internal self-biasing network on chip and
the other has a partly integrated bias for
easy Gate 1 switch-off with PNP switching transis-
tors inside PLL -IC
well as external components
resp. 28 mS
and WEEE 2002/96/EC
®
TSDF72830YS, assembled in
®
- two AGC Amplifiers for TV-Tuner Prestage
®
amplifiers with com-
e3
Applications
Low noise gain controlled VHF and UHF input stages
with 5 V supply voltage, such as in digital and analog
TV tuners and in other multimedia and communica-
tions equipment.
Typical Application
Mechanical Data
Case: SOT-363L Plastic case
Weight: approx. 6.0 mg
V - Vishay
Y - Year, is variable for digit from 0 to 9
(e.g. 3 = 2003, 4 = 2004)
CW - Calendar Week, is variable for
number from 01 to 52
Number of Calendar Week is always indicating
place of pin 1
Pinning:
1 = Gate 1 (VHF amplifier), 2 = Gate 2 (common)
3 = Gate 1 (UHF amplifier), 4 = Drain (UHF amplifier),
5 = Source (common), 6 = Drain (VHF amplifier)
V
V
GG
GG
AGC
V
VHF
UHF
in
in
GG
= 5 V: UHF AMP is on; VHF AMP is off
= 0 V: UHF AMP is off; VHF AMP is on
(0 = shorted to Ground or open)
C
RG1
CW
VY
C
C
6
1
WN7
3
5
2
1
Electrostatic sensitive device.
Observe precautions for handling
4
3
2
G2 (common)
G1
G1
AMP2
AMP1
S (common)
Vishay Semiconductors
TSDF72830YS
5
D
D
4
6
RFC
RFC
C
C
18982
18981
UHF
VHF
+5 V
+5 V
out
out
www.vishay.com
1

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TSDF72830YS-GS08 Summary of contents

Page 1

... Integrated Band Switch for One-Line Switching Comments MOSMIC - MOS Monolithic Integrated Circuit Description ® The Dual-MOSMIC TSDF72830YS, assembled in the well-known SOT-363 plastic package combi- ® nation of two different MOSMIC mon Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is opti- ...

Page 2

... TSDF72830YS Vishay Semiconductors Parts Table Part TSDF72830YS Absolute Maximum Ratings °C, unless otherwise specified amb Amplifier 1 Following data are valid for operating amplifier 1 (pin which is optimized for VHF applications Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Gate 1 - source voltage ≤ ...

Page 3

... G2S DS (BR)G1SS = 10 mA ± V G1S DS (BR)G2SS = G2S DS G1SS = ± I G1S DS G2SS = RG1 G2S DSO = 20 μ G2S D G1S(OFF =100 kΩ, V RG1 G1 G2S(OFF) TSDF72830YS Vishay Semiconductors Min Typ. Max 0.3 1.2 Min Typ. Max 0.3 1.0 0.3 1.2 www.vishay.com Unit V V μ Unit ...

Page 4

... TSDF72830YS Vishay Semiconductors Electrical AC Characteristics °C, unless otherwise specified amb Amplifier Gate RG1 G2S Following data are valid for operating amplifier 1 (pin which is optimized for VHF applications Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain mS 0.5 mS, B ...

Page 5

... 0.5 mS 400 MHz Sopt = 1 mS 800 MHz Sopt X mod = 50 MHz mod = 50 MHz, w will raise and improved intermodulation behavior will be performed. DSO TSDF72830YS Vishay Semiconductors Min Typ. Max 1.7 2 5.0 7.0 1.0 1.5 1.3 2.0 90 dBμV 100 105 dBμ ...

Page 6

... TSDF72830YS Vishay Semiconductors Package Dimensions in mm (Inches) 0.10 (0.004) 10 2.20 (0.087) 1.80 (0.071) 0.30 (0.012) 0.20 (0.009) 0.65 (0.026) 1.3 (0.052) www.vishay.com 6 0.25 (0.010) 1.00 (0.039) 0.10 (0.004) 0.80 (0.031) Mounting Pad Layout ISO Method E 0.35 (0.014) 0.65 (0.026) Ref. 1.30 (0.052) Ref. ...

Page 7

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85176 Rev. 1.1, 02-May-05 and may do so without further notice. TSDF72830YS Vishay Semiconductors www.vishay.com 7 ...

Page 8

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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