RD28F3208C3T70 Intel, RD28F3208C3T70 Datasheet - Page 37
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RD28F3208C3T70
Manufacturer Part Number
RD28F3208C3T70
Description
Manufacturer
Intel
Datasheet
1.RD28F3208C3T70.pdf
(75 pages)
Specifications of RD28F3208C3T70
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RD28F3208C3T70
Manufacturer:
FUJITSU
Quantity:
252
5.9
Table 18.
Datasheet
SRAM AC Characteristics—Read Operations
SRAM AC Characteristics—Read Operations
Note:
1.
2.
3.
4.
C3 SCSP Flash Memory
R10
R12
R11
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
Intel
See
At any given temperature and voltage condition, t
device and from device to device interconnection.
Sampled, but not 100% tested.
Timings of t
conditions and are not referenced to output voltage levels.
t
t
t
t
t
t
t
t
t
t
t
t
®
RC
AA
CO1,
OE
BA
LZ1
OLZ
HZ1
OHZ
OH
BLZ
BHZ
Figure 9 “AC Waveform: SRAM Read Operations” on page
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Sym
, t
, t
t
LZ2
HZ2
CO2
HZ
Order Number: 252636, Revision: 004
and t
Read Cycle Time
Address to Output Delay
S-CS1#, S-CS2 to Output Delay
S-OE# to Output Delay
S-UB#, LB# to Output Delay
S-CS1#, S-CS2 to Output in Low Z
S-OE# to Output in Low Z
S-CS1#, S-CS2 to Output in High Z
S-OE# to Output in High Z
Output Hold from Address, S-CS1#,
S-CS2, or S-OE# Change, Whichever Occurs
First
S-UB#, S-LB# to Output in Low Z
S-UB#, S-LB# to Output in High Z
OHZ
are defined as the time at which the outputs achieve the open circuit
Parameter
HZ
(1)
(Max) is less than and t
Voltage Range
Density
38.
Note
2,3,4
2,3
3,4
3
3
3
LZ
(Max) both for a given
Min
2.7 V– 3.3 V
70
–
–
–
–
5
0
0
0
0
0
0
2/4/8-Mbit
26 Aug 2005
Max
70
70
35
70
25
25
25
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
37