RD38F1020C0ZBL0S B48 Intel, RD38F1020C0ZBL0S B48 Datasheet - Page 74
RD38F1020C0ZBL0S B48
Manufacturer Part Number
RD38F1020C0ZBL0S B48
Description
Manufacturer
Intel
Datasheet
1.RD38F1020C0ZBL0S_B48.pdf
(75 pages)
Specifications of RD38F1020C0ZBL0S B48
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
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C3 SCSP Flash Memory
Appendix H Ordering Information
.
Table 38.
Table 39.
26 Aug 2005
74
Ordering Information for Product Combinations with 0.25 µm to 0.13 µm Flash
Ordering Information for Combinations specific to 32M 0.13 µm Flash
Package
PF = Lead-Free Ball Stacked-CSP
Product Line Designator
Flash Density
320 = x16 (32 Mbit)
160 = x16 (16 Mbit)
SRAM Device Density
8 = x16 (8 Mbit)
4 = x16 (4 Mbit)
2 = x16 (2 Mbit)
Package
Product Line Designator
Density
Product Family
RD = Leaded Ball Stacked -CSP
28F or 38F = Intel
RD = Leaded Ball Stacked-CSP
PF = Lead-Free Ball Stacked-CSP
38F = Intel
Flash #1 = 1 = 32 Mbit
Flash #2 = 0 = No Die
Flash #3 = 1 = 4 Mbit SRAM
Flash #4 = 0 = No Die
C = Advanced+ Boot Block Flash Memory
Intel
= 2 = 8 Mbit SRAM
®
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Flash Stacked Memory
®
R D 2 8 F 1 6 0 2 C 3 T D 7 0
R D 3 8 F 1 0 1 0 C 0 Z T L 0
Flash Memory
Order Number: 252636, Revision: 004
16 Mbit = 70, 90, or 110 ns
32 Mbit = 70 or 90 ns
Product Family
C = Advanced+ Boot Block
Technology
Differentiator
D = 0.13µm
<blank> = 0.25µm or
0.18µm (refer to access
speed for differientation)
Parameter Location
T = Top Blocking
B = Bottom Blocking
Access Speed (ns)
0 = Original Version of
this product:
Flash Speed = 70 ns
Flash Process = 0.13 µm
Vccq = 2.7 V to 3.3 V
Z = 3.0 V I/O
Device Details
Pinout Indicator
L = 72 ball "I"-ballout
Parameter Location
T = Top Blocking
B = Bottom Blocking
Voltage
Flash Memory
Datasheet
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