PF48F6000M0Y1BE Micron Technology Inc, PF48F6000M0Y1BE Datasheet - Page 42
PF48F6000M0Y1BE
Manufacturer Part Number
PF48F6000M0Y1BE
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF48F6000M0Y1BE.pdf
(102 pages)
Specifications of PF48F6000M0Y1BE
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
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Figure 18: Synchronous Write To Read Operation
7.2
Note:
Table 17: Erase and Program Times (Sheet 1 of 2)
Datasheet
42
Address [A]
Erasing and Suspending
Erase Time
Suspend
Latency
Programming
Program
Time
Enhanced Factory Programming
Data [D/Q ]
Operation
WAIT [T ]
WE# [W]
RST# [P]
OE# [G ]
CE# [E}
ADV#
CLK
W1
Symbol
W2
Erase and Program Times
Specifications are for 130 nm and 90 nm devices unless otherwise stated.
W500
W501
W600
W601
W200
W201
W202
tERS/PB
t
t
t
tPROG/W
tPROG/PB
tPROG/MB
ERS/MB
SUSP/P
SUSP/E
Parameter
W5
W3
W3
(5)
W4
D
4-Kword Parameter Block
32-Kword Main Block
Program Suspend
Erase Suspend
Single Word
4-Kword Parameter Block
32-Kword Main Block
W7
W6
W18
W8
Description
W19
W20
R11
R11
R12
R302
R301
R303
(1)
R104
R104
R306
R106
R3
Notes
2,3
2,3
2,3
2,3
Numonyx™ Wireless Flash Memory (W18)
Numonyx™ Wireless Flash Memory (W18)
R2
Lat ency Count
2
2
2
R4
0.05
Typ
0.3
0.7
0.4
12
5
5
V
PP1
Max
150
2.5
1.8
.23
10
20
4
Order Number: 290701-18
R307
R304
0.25
0.03
0.24
Typ
0.4
5
5
8
Q
V
PP2
November 2007
Max
0.07
130
2.5
0.6
10
20
4
R305
R304
Unit
Q
µs
µs
µs
s
s
s
s
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