RD28F3208C3B90 Intel, RD28F3208C3B90 Datasheet - Page 30
RD28F3208C3B90
Manufacturer Part Number
RD28F3208C3B90
Description
Manufacturer
Intel
Datasheet
1.RD28F3208C3B90.pdf
(75 pages)
Specifications of RD28F3208C3B90
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
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C3 SCSP Flash Memory
Table 13.
Figure 4.
Figure 5.
26 Aug 2005
30
V
V
V
V
V
V
V
V
V
Notes:
1.
2.
Symbol
IL
IH
OL
OH
PPLK
PP1
PP2
LKO
LKO2
Erase and Program are inhibited when F-V
V
Applying F-V
blocks and 2500 cycles on the parameter blocks. F-V
Section 4.2.1
PP2
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
F-V
F-V
Operations
V
V
.
CC
CCQ
PP
PP
DC Characteristics
Input/Output Reference Waveform
Test Configuration
Note:
Prog/Erase Lock Voltage
Note:
Prog/Erase Lock Voltage
Lock-Out Voltage
during Program / Erase
pp
for details.
Parameter
= 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main
Intel
V
0.0
C
AC test inputs are driven at V
timing ends, at V
when V
CC
L
includes jig capacitance.
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
CCQ
INPUT
= V
Order Number: 252636, Revision: 004
CCQ
CCQ
Min.
/2. Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are
Device
Under Test
SRAM
SRAM
SRAM
SRAM
Flash/
Flash/
Flash/
Flash/
Flash
Flash
Flash
Flash
pp
Device
< V
CCQ
V
PPLK
CC
2
for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output
Note
pp
1,2
and not guaranteed outside the valid F-V
1
1
may be connected to 12 V for a total of 80 hours maximum. See
TEST POINTS
V
–0.10
–0.2
1.65
11.4
Min
2.7 V – 3.3 V
2.3
CC
0.1
1.5
1.2
–
C
Max
+0.2
0.10
12.6
L
V
0.6
1.0
3.3
CC
Units
V
V
V
V
V
V
V
V
Out
F-V
I
F-V
I
Complete Write Protection
OL
OH
V
pp
CC
CC
= 100 µA
CC
2
= –100 µA
Test Conditions
ranges of V
/S-V
/S-V
CC
CC
OUTPUT
= V
= V
Datasheet
PP1
CC
CC
Min
Min
and
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