AM42DL1622DT85I Spansion Inc., AM42DL1622DT85I Datasheet - Page 24
![no-image](/images/manufacturer_photos/0/6/621/spansion_inc__sml.jpg)
AM42DL1622DT85I
Manufacturer Part Number
AM42DL1622DT85I
Description
Manufacturer
Spansion Inc.
Datasheet
1.AM42DL1622DT85I.pdf
(128 pages)
Specifications of AM42DL1622DT85I
Lead Free Status / RoHS Status
Supplier Unconfirmed
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22
(Word Mode)
(Word Mode)
Addresses
Addresses
1Ch
1Dh
2Ch
2Dh
3Ch
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
003Eh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Data
Table 12. Device Geometry Definition
Table 11. System Interface String
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
Am42DL16x2D
N
byte
PP
PP
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
times typical
Description
Description
ms (00h = not supported)
N
N
times typical
N
N
N
µ
s (00h = not supported)
ms
µs
February 6, 2004
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