RD28F1602C3TD70S B93 Intel, RD28F1602C3TD70S B93 Datasheet - Page 56
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RD28F1602C3TD70S B93
Manufacturer Part Number
RD28F1602C3TD70S B93
Description
Manufacturer
Intel
Datasheet
1.RD28F1602C3TD70S_B93.pdf
(75 pages)
Specifications of RD28F1602C3TD70S B93
Operating Supply Voltage (max)
3.3V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Not Compliant
- Current page: 56 of 75
- Download datasheet (2Mb)
C3 SCSP Flash Memory
B.6
n
Table 27.
26 Aug 2005
56
Offset
2Ch
2Dh
2Ah
27h
28h
31h
Length
Device Geometry Definition
Device Geometry Definition
1
2
2
1
4
4
Intel
“n” such that device size = 2
Flash device interface: x8 async x16 async x8/x16 async
“n” such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or
more contiguous same-size erase blocks.
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
Erase Block Region 1 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
Erase Block Region 2 Information
bits 0–15 = y, y+1 = number of identical-size erase blocks
bits 16–31 = z, region erase block(s) size are z x 256 bytes
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Order Number: 252636, Revision: 004
28:00,29:00 28:01,29:00 28:02,29:00
n
Description
in number of bytes
n
2A:
2B:
2C:
2D:
2E:
27:
28:
29:
2F:
30:
31:
32:
33:
34:
See Table Below
--01
--00
--00
--00
--02
Code
Datasheet
x16
0
2
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