M36W0R6040T0ZAQ STMicroelectronics, M36W0R6040T0ZAQ Datasheet - Page 7

• Manufacturer Part Number: M36W0R6040T0ZAQ
• Manufacturer: STMicroelectronics

Specifications of M36W0R6040T0ZAQ

• Operating Supply Voltage (max): 1.95V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

PSRAM Output Enable (G
able, G
allowing fast read/write cycles to be achieved with
the common I/O data bus.
PSRAM Write Enable (W
W
ory.
PSRAM Upper Byte Enable (UB
Byte Enable, UB
Byte Data Inputs/Outputs (DQ8-DQ15) to or from
the upper part of the selected address during a
Write or Read operation.
PSRAM Lower Byte Enable (LB
Byte Enable, LB
Byte Data Inputs/Outputs (DQ0-DQ7) to or from
the lower part of the selected address during a
Write or Read operation.
V
supply to the internal core of the Flash memory
component. It is the main power supplies for all
Flash memory operations (Read, Program and
Erase).
V
age supplies the power for all operations (Read or
Write) and for driving the refresh logic, even when
the device is not being accessed.
V
supply for the Flash Memory and PSRAM I/O pins.
This allows all Outputs to be powered indepen-
dently of the Flash Memory and PSRAM core pow-
er supplies: V
DDF
DDP
DDQ
P
, controls the Bus Write operation of the mem-
Supply Voltage. V
Supply Voltage. The V
Supply Voltage. V
P
, provides a high speed tri-state control,
DDF
P
P
and V
, gates the data on the Lower
, gates the data on the Upper
DDP
DDF
P
DDQ
). The Write Enable,
P
, respectively.
). The Output En-
provides the power
provides the power
DDP
P
P
). The Lower
). The Upper
Supply Volt-
V
Flash Memory control input and a Flash Memory
power supply pin. The two functions are selected
by the voltage range applied to the pin.
If V
V
age lower than V
tion against Program or Erase, while V
enables these functions (see Tables
Characteristics for the relevant values). V
only sampled at the beginning of a Program or
Erase; a change in its value after the operation has
started does not have any effect and Program or
Erase operations continue.
If V
supply pin. In this condition V
until the Program/Erase algorithm is completed.
V
ence for all voltage measurements in the Flash
(core and I/O Buffers) and PSRAM chips.
Note: Each Flash memory device in a system
should have its supply voltage (V
program supply voltage V
0.1µF ceramic capacitor close to the pin (high
frequency, inherently low inductance capaci-
tors should be as close as possible to the
package). See
Load
sufficient to carry the required V
and erase currents.
PPF
PPF
SS
PPF
PPF
Ground. V
is seen as a control input. In this case a volt-
Program Supply Voltage. V
Circuit. The PCB track widths should be
is kept in a low voltage range (0V to V
is in the range of V
M36W0R6040T0, M36W0R6040B0
SS
PPLKF
Figure 6., AC Measurement
is the common ground refer-
gives an absolute protec-
PPHF
PPF
PPF
decoupled with a
it acts as a power
must be stable
PPF
PPF
DDF
6
PPF
and 7, DC
) and the
is both a
program
> V
PPF
DDQ
PP1F
7/18
is
)