MT47H32M16HR-37E:F Micron Technology Inc, MT47H32M16HR-37E:F Datasheet - Page 108

• Manufacturer Part Number: MT47H32M16HR-37E:F
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-37E:F

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 61: WRITE-to-PRECHARGE
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS#
DQS#
DQS#
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
Notes:
WL + t DQSS
WL - t DQSS
WL + t DQSS
NOP
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. BL = 4, CL = 3, AL = 0; thus, WL = 2.
5.
6. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE
7. A10 is LOW with the WRITE command (auto precharge is disabled).
T1
DI b.
t
and WRITE commands may be to different banks, in which case
the PRECHARGE command could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
DI
b
NOP
T2
DI
b
DI
b
T2n
1
NOP
1
T3
108
1
T3n
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
T5
NOP
Transitioning Data
t WR
© 2004 Micron Technology, Inc. All rights reserved.
t
T6
DQSS.
NOP
t
WR is not required and
(a or all)
T7
Bank,
PRE
Don’t Care
t RP
WRITE