K4S561632E-LL75 Samsung Semiconductor, K4S561632E-LL75 Datasheet - Page 8

• Manufacturer Part Number: K4S561632E-LL75
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S561632E-LL75

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS (x4, x8)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S5604(08)32E-UC
4. K4S5604(08)32E-UL
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
P
N
P
N
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
4banks Activated.
t
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
CCD
RC
RC
O
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70°C)
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
/V
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
= ∞
= ∞
/V
C
L
SSQ
).
Version
Rev. 1.3 August 2004
100
180
1.5
75
80
20
10
25
25
2
2
6
6
3
CMOS SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4