W981216AH-75G Winbond, W981216AH-75G Datasheet - Page 35

• Manufacturer Part Number: W981216AH-75G
• Manufacturer: Winbond
• Type: SDRAMr

Specifications of W981216AH-75G

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 120mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Revision 1.0
Autoprecharge timing ( Write Cycle )
(1) CAS Latency=2
(2) CAS Latency=3
( b ) burst length = 2
( d ) burst length = 8
( b ) burst length = 2
( d ) burst length = 8
( a ) burst length = 1
( c ) burst length = 4
( a ) burst length = 1
( c ) burst length = 4
Command
Command
Command
Command
Command
Command
Command
Command
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
Note )
Write
Write
Write
Write
Write
Write
Write
Write
D0
D0
D0
D0
D0
D0
D0
D0
0
command to the start of internal precgarging must be at least tRAS(min)..
When the Auto precharge command is asserted, the period from Bank Activate
Write
t
t
Act
WR
WR
AP
D1
D1
D1
D1
D1
D1
AP
AP
1
t
t
WR
WR
represents the Bank Activate command.
represents the Write with Auto precharge command.
D2
D2
D2
D2
represents the start of internal precharging.
AP
AP
t
2
RP
t
RP
D3
D3
D3
D3
Act
t
3
RP
t
t
t
RP
WR
WR
D4
D4
Act
AP
Act
AP
4
- 35 -
D5
D5
Act
t
2M x 16 bit x 4 Banks SDRAM
5
RP
t
RP
D6
D6
Act
6
D7
D7
Publication Release Date: March, 1999
Act
7
t
t
WR
WR
AP
AP
8
W981216AH
t
9
RP
t
RP
Act
10
Act
11