W981216AH-75G Winbond, W981216AH-75G Datasheet - Page 35
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W981216AH-75G
Manufacturer Part Number
W981216AH-75G
Description
Manufacturer
Winbond
Type
SDRAMr
Datasheet
1.W981216AH-75G.pdf
(44 pages)
Specifications of W981216AH-75G
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
120mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Revision 1.0
Autoprecharge timing ( Write Cycle )
(1) CAS Latency=2
(2) CAS Latency=3
( b ) burst length = 2
( d ) burst length = 8
( b ) burst length = 2
( d ) burst length = 8
( a ) burst length = 1
( c ) burst length = 4
( a ) burst length = 1
( c ) burst length = 4
Command
Command
Command
Command
Command
Command
Command
Command
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
Note )
Write
Write
Write
Write
Write
Write
Write
Write
D0
D0
D0
D0
D0
D0
D0
D0
0
command to the start of internal precgarging must be at least tRAS(min)..
When the Auto precharge command is asserted, the period from Bank Activate
Write
t
t
Act
WR
WR
AP
D1
D1
D1
D1
D1
D1
AP
AP
1
t
t
WR
WR
represents the Bank Activate command.
represents the Write with Auto precharge command.
D2
D2
D2
D2
represents the start of internal precharging.
AP
AP
t
2
RP
t
RP
D3
D3
D3
D3
Act
t
3
RP
t
t
t
RP
WR
WR
D4
D4
Act
AP
Act
AP
4
- 35 -
D5
D5
Act
t
2M x 16 bit x 4 Banks SDRAM
5
RP
t
RP
D6
D6
Act
6
D7
D7
Publication Release Date: March, 1999
Act
7
t
t
WR
WR
AP
AP
8
W981216AH
t
9
RP
t
RP
Act
10
Act
11