MT41J256M4HX-187E:D Micron Technology Inc, MT41J256M4HX-187E:D Datasheet - Page 105
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MT41J256M4HX-187E:D
Manufacturer Part Number
MT41J256M4HX-187E:D
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J256M4HX-187ED.pdf
(208 pages)
Specifications of MT41J256M4HX-187E:D
Organization
256Mx4
Density
1Gb
Address Bus
17b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
190mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Table 65: Derating Values for
Shaded cells indicate slew rate combinations not supported
Table 66: Required Time
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Rate V/ns
DQ Slew
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Slew Rate (V/ns)
>2.0
<0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
Δ
68
45
t
4.0 V/ns
0
DS Δ
t
50
34
0
DH Δ
t
68
45
3.0 V/ns
0
2
DS Δ
t
VAC Above V
t
VAC at 175mV (ps)
t
50
34
–4
t
DH Δ
0
DS/
Δ
t
t
DS, Δ
Min
DH – AC135/DC100-Based
68
45
75
57
50
38
34
29
22
13
t
2.0 V/ns
0
2
0
0
DS Δ
IH(AC)
t
DH Derating (ps) – AC/DC-Based
DQS, DQS# Differential Slew Rate
t
50
34
–4
0
DH Δ
(Below V
53
10
t
1.8 V/ns
8
DS Δ
105
t
t
42
VAC at 150mV (ps)
DH Δ
8
4
IL(AC)
t
16
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
) for Valid Transition
1.6 V/ns
DS Δ
Min
175
170
167
163
162
161
159
155
150
150
Data Setup, Hold, and Derating
t
16
12
DH Δ
1Gb: x4, x8, x16 DDR3 SDRAM
t
1.4 V/ns
DS Δ
t
DH Δ
© 2006 Micron Technology, Inc. All rights reserved.
t
VAC at 135mV (ps)
t
1.2 V/ns
DS Δ
Min
187
165
121
n/a
n/a
n/a
n/a
n/a
50
20
t
DH Δ
t
1.0 V/ns
DS Δ
t
DH
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