M25P40-VMW6GB NUMONYX, M25P40-VMW6GB Datasheet - Page 58

• Manufacturer Part Number: M25P40-VMW6GB
• Manufacturer: NUMONYX

Specifications of M25P40-VMW6GB

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SO W
• Program/erase Volt (typ): 2.3 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Compliant

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16-Jan-2002
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24-Oct-2005
Date
Revision history
Document revision history
Revision
1.0
1.2
1.4
1.5
2.0
4.0
6.0
7.0
1.1
1.3
1.6
3.0
5.0
Document written.
Serial Paged Flash Memory renamed as Serial Flash Memory.
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection
modes; Release from Power-down and Read Electronic Signature (RES); Power-
up.
Repositioning of several tables and illustrations without changing their contents.
Power-up timing illustration; SO8W package removed.
Changes to tables: Abs Max Ratings/V
FAST_READ instruction added. Document revised with new timings, V
clock slew rate. Descriptions of Polling, Hold Condition, Page Programming,
Release for Deep Power-down made more precise. Value of t
Clarification of descriptions of entering Standby Power mode from Deep Power-
down mode, and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
Typical Page Program time improved. Deep Power-down current changed. Write
Protect setup and hold times specified, for applications that switch Write Protect to
exit the Hardware Protection mode immediately before a WRSR, and to enter the
Hardware Protection mode again immediately after.
Document promoted from Preliminary Data to full Datasheet.
Table of contents, warning about exposed paddle on MLP8, and Pb-free options
added.
40 MHz AC Characteristics table included as well as 25 MHz. I
and t
Automotive range added. Soldering temperature information clarified for RoHS
compliant devices.
Device grade information clarified. Data-retention measurement temperature
corrected. Details of how to find the date of marking added.
Small text changes. Notes 2 and 3 removed from
scheme.
End timing line of t
Updated Page Program (PP) instructions in
(PP),
50 MHz operation added (see
device grade 6, VCC min = 2.7
removed from under
MLP package renamed as VFQFPN, silhouette and package mechanical drawing
updated (see
pitch Quad Flat Package No lead, 6 × 5 mm, package
BE
Instruction times, process technology 110
(typ) values improved. Change of naming for VDFPN8 package.
on page 1
SHQZ
Plating technology
modified in
and
Figure 29: VFDFPN8 (MLP8) 8-lead Very thin Fine
Table 20: AC characteristics (50 MHz operation,
V)). All packages are RoHS compliant. Blank option
Figure 25: Output
Changes
IO
in
; DC Characteristics/V
Table 29: Ordering information
Page
nm.
Table 29: Ordering information
Programming,
timing.
outline.
W
CC3
IL
(max) modified.
.
Page Program
(max), t
WI
, I
scheme.
SE
CC3
(typ)
and