MT29F2G16ABAEAWP-IT:E Micron Technology Inc, MT29F2G16ABAEAWP-IT:E Datasheet - Page 46

• Manufacturer Part Number: MT29F2G16ABAEAWP-IT:E
• Description: MICMT29F2G16ABAEAWP-IT:E 2G SLC NAND FLA
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G16ABAEAWP-IT:E

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 13: Feature Addresses 80h: Programmable I/O Drive Strength
Table 14: Feature Addresses 81h: Programmable R/B# Pull-Down Strength
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Subfeature
Parameter
P1
I/O drive strength
P2
P3
P4
Subfeature
Parameter
P1
R/B# pull-down
strength
P2
P3
P4
Options
Full (default)
Three-quarters
One-half
One-quarter
Options
Full (default)
Three-quarters
One-half
One-quarter
Note:
Note:
1. The programmable drive strength feature address is used to change the default I/O
1. This feature address is used to change the default R/B# pull-down strength. Its strength
drive strength. Drive strength should be selected based on expected loading of the mem-
ory bus. This table shows the four supported output drive strength settings. The default
drive strength is full strength. The device returns to the default drive strength mode
when the device is power cycled. AC timing parameters may need to be relaxed if I/O
drive strength is not set to full.
should be selected based on the expected loading of R/B#. Full strength is the default,
power-on value.
I/O7
I/O7
I/O6
I/O6
Reserved (0)
Reserved (0)
Reserved (0)
I/O5
I/O5
Reserved (0)
Reserved (0)
Reserved (0)
Reserved (0)
46
I/O4
I/O4
Reserved (0)
Reserved (0)
Reserved (0)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
I/O3
I/O3
I/O2
I/O2
I/O1
I/O1
0
0
1
1
0
0
1
1
Feature Operations
© 2009 Micron Technology, Inc. All rights reserved.
I/O0
I/O0
0
1
0
1
0
1
0
1
Value
Value
00h
01h
02h
03h
00h
00h
00h
00h
01h
02h
03h
00h
00h
00h
Notes
Notes
1
1