LRI2K-A1T/1GE STMicroelectronics, LRI2K-A1T/1GE Datasheet - Page 23
LRI2K-A1T/1GE
Manufacturer Part Number
LRI2K-A1T/1GE
Description
Manufacturer
STMicroelectronics
Datasheet
1.LRI2K-A1T1GE.pdf
(86 pages)
Specifications of LRI2K-A1T/1GE
Operating Temperature (max)
85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
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LRI2K
6
6.1
6.1.1
LRI2K to VCD frames
Frames are delimited by an SOF and an EOF. They are implemented using code violation.
Unused options are reserved for future use. For the low data rate, the same subcarrier
frequency or frequencies is/are used. In this case the number of pulses is multiplied by 4.
For the Fast commands using one subcarrier, all pulse numbers and times are divided by 2.
SOF when using one subcarrier
High data rate
The SOF includes an unmodulated time of 56.64 µs followed by 24 pulses at 423.75 kHz
(f
at 423.75 kHz. The SOF is shown in
Figure 24. Start of frame, high data rate, one subcarrier
For the Fast commands, the SOF comprises an unmodulated time of 28.32 µs, followed by
12 pulses at 423.75 kHz (f
9.44 µs followed by 4 pulses at 423.75 kHz as shown in
Figure 25. Start of frame, high data rate, one subcarrier x2
C
/32), and a logic 1 that consists of an unmodulated time of 18.88 µs followed by 8 pulses
C
/32), and a logic 1 that consists of an unmodulated time of
113.28µs
Figure
56.64µs
24.
Figure
18.88µs
25.
LRI2K to VCD frames
ai12079
37.76µs
ai12078
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