MT45V256KW16PEGA-55 WT Micron Technology Inc, MT45V256KW16PEGA-55 WT Datasheet - Page 17
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MT45V256KW16PEGA-55 WT
Manufacturer Part Number
MT45V256KW16PEGA-55 WT
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT45V256KW16PEGA-55_WT.pdf
(26 pages)
Specifications of MT45V256KW16PEGA-55 WT
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Electrical Characteristics
Table 3:
Table 4:
PDF: 09005aef832450a3/Source: 09005aef82f264aa
8mb_4mb_ap_3v_psram_p22z__2.fm - Rev. B 4/08 EN
Parameter
Description
Voltage to any ball except V
Voltage on V
Voltage on V
Storage temperature
Operating temperature (case)
Soldering temperature and time
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Operating Current
Asynchronous random
READ/WRITE
Asynchronous page READ
Standby current
Wireless
Industrial
10 seconds (solder ball only)
CC
CC
Absolute Maximum Ratings
Electrical Characteristics and Operating Conditions
Wireless temperature (–30ºC ≤ T
Q supply relative to V
supply relative to V
Notes:
Stresses greater than those listed in Table 3 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. Input signals may overshoot to V
2. Input signals may undershoot to V
3. This parameter is specified with the outputs disabled to avoid external loading effects. The
4. I
CC
Chip enabled; I
; V
user must add the current required to drive output capacitance expected in the actual sys-
tem.
inputs must be driven to V
power-up or when entering standby mode.
V
V
SB
V
CC
IN
IN
Chip disabled
I
IN
OE# = V
Conditions
OH
I
(MAX) values measured with PAR set to FULL ARRAY. To achieve low standby current, all
CE# = V
OL
Q relative to V
SS
= V
= V
= 0 to V
SS
= –0.2mA
= 0.2mA
CC
CC
Q or 0V
Q or 0V
IH
CC
CC
OUT
or
Q
C
Q
4Mb: 3.0V Core Async/Page PSRAM Memory 256K x 16
≤ +85 ºC); Industrial temperature (–40ºC < T
= 0
SS
V
I
V
I
CC
V
V
V
V
I
CC
I
CC
I
LO
SB
OH
OL
CC
LI
IH
CC
IL
1P
1
Q
Symbol
Q or V
17
CC
-55, -70
-55, -70
SS
Q + 1.0V for periods less than 2ns during transitions.
SS
- 1.0V for periods less than 2ns during transitions.
. I
–0.5V to 4.0V or V
SB
Micron Technology, Inc., reserves the right to change products or specifications without notice.
may be slightly higher for up to 500ms after
V
0.8 V
CC
Min
–0.2
2.7
2.7
Q - 0.4
–
–
–
–
–
–
CC
–55°C to +150°C
Q
–30°C to +85°C
–40°C to +85°C
–0.2V to +4.0V
–0.2V to +4.0V
CC
Electrical Characteristics
Rating
Q + 0.3V (whichever is less)
260°C
V
C
0.2 V
CC
< +85ºC)
Max
+0.4
Q + 0.2
140
3.6
3.6
30
18
©2007 Micron Technology, Inc. All rights reserved.
1
1
–
CC
Q
Unit
mA
mA
µA
µA
µA
V
V
V
V
V
V
Notes
1
2
3
3
4