MT18HTF25672FDY-667E1D4 Micron Technology Inc, MT18HTF25672FDY-667E1D4 Datasheet - Page 8

• Manufacturer Part Number: MT18HTF25672FDY-667E1D4
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF25672FDY-667E1D4

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 7: I
Table 8: I
Table 9: I
Table 10: I
Table 11: I
PDF: 09005aef81a2f237
htf18c128_256x72fdy.pdf - Rev. D 12/09 EN
Symbol
I
I
I
Symbol
I
I
Total power
Symbol
I
I
Total power
Symbol
I
I
Total power
Symbol
I
I
Total power
DD_TRAINING
DD_IBIST
DD_EI
CC
DD
CC
DD
CC
DD
CC
DD
DD
DD
DD
DD
DD
Conditions (Continued)
Specifications – 1GB DDR2-533
Specifications – 1GB DDR2-667
Specifications – 1GB DDR2-800
Specifications – 2GB DDR2-533
I
I
I
I
DD_IDLE_0
DD_IDLE_0
DD_IDLE_0
DD_IDLE_0
2200
1420
2600
1510
2200
1420
TBD
TBD
TBD
Note:
6.2
6.2
7.0
Condition
Training: Primary and secondary channels enabled; 100% toggle on all channel lanes;
DRAMs idle; 0% bandwidth; CKE HIGH; Command and address lines stable; DDR2 SDRAM
clock active
IBIST over all IBIST modes: DRAM idle (0% bandwidth); Primary channel enabled; Secon-
dary channel enabled; CKE HIGH; Command and address lines stable; DDR2 SDRAM clock active
Electrical idle: DRAM idle (0% bandwidth); Primary channel disabled; Secondary channel
disabled; CKE LOW; Command and address lines floated; DDR2 SDRAM clock active; ODT and
CKE driven LOW
1. Actual test conditions may vary from published JEDEC test conditions.
I
I
I
I
DD_IDLE_1
DD_IDLE_1
DD_IDLE_1
DD_IDLE_1
3000
1420
3000
1420
3400
1510
TBD
TBD
TBD
7.4
7.4
8.2
I
I
I
I
DD_ACTIVE_1
DD_ACTIVE_1
DD_ACTIVE_1
DD_ACTIVE_1
1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
3400
2545
3400
2425
3900
2777
10.2
10.0
11.4
TBD
TBD
TBD
8
I
I
I
I
DD_ACTIVE_2
DD_ACTIVE_2
DD_ACTIVE_2
DD_ACTIVE_2
3700
1510
3200
1420
3200
1420
TBD
TBD
TBD
8.7
7.7
7.7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
DD
I
I
I
I
DD_TRAINING
DD_TRAINING
DD_TRAINING
DD_TRAINING
Conditions and Specifications
4000
1510
3500
1420
3500
1420
TBD
TBD
TBD
9.2
8.2
8.2
I
I
I
I
DD_IBIST
DD_IBIST
© 2005 Micron Technology, Inc. All rights reserved.
DD_IBIST
DD_IBIST
3800
1420
3800
1420
4500
1510
10.0
TBD
TBD
TBD
8.7
8.7
I
I
2000
2000
I
I
DD_EI
DD_EI
2500
326
326
DD_EI
DD_EI
TBD
TBD
TBD
3.8
3.8
326
4.6
Units
Units
Units
Units
W
W
W
W
A
A
A
A
A
A
A
A