MT8LSDT1664HY-13EG3 Micron Technology Inc, MT8LSDT1664HY-13EG3 Datasheet - Page 17

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MT8LSDT1664HY-13EG3

Manufacturer Part Number
MT8LSDT1664HY-13EG3
Description
MODULE SDRAM 128MB 144SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT8LSDT1664HY-13EG3

Memory Type
SDRAM
Memory Size
128MB
Speed
133MHz
Features
-
Package / Case
144-SODIMM
Lead Free Status / RoHS Status
Compliant
Table 17: EEPROM Device Select code
The most significant bit (b7) is sent first
Table 18: EEPROM Operating modes
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
SDA OUT
MODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 9: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
b7
IH
IH
IH
IH
1
0
WC
V
V
DEVICE TYPE IDENTIFIER
or V
or V
or V
or V
IL
IL
t HIGH
t HD:DAT
IL
IL
IL
IL
b6
0
1
17
BYTES
1
1
1
1
16
64MB, 128MB, 256MB (x64, DR)
1
t DH
b5
1
1
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
INITIAL SEQUENCE
START, Device Select, RW = 1
START, Device Select, RW = 0, Address
reSTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
t SU:DAT
144-PIN SDRAM SODIMM
b4
0
0
SA2
SA2
b3
CHIP ENABLE
©2004 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0

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