MT36VDDF25672Y-40BF3 Micron Technology Inc, MT36VDDF25672Y-40BF3 Datasheet - Page 17
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MT36VDDF25672Y-40BF3
Manufacturer Part Number
MT36VDDF25672Y-40BF3
Description
MODULE DDR SDRAM 2GB 184DIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT36VDDF25672Y-40BF3.pdf
(20 pages)
Specifications of MT36VDDF25672Y-40BF3
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
256Mx72
Total Density
2GByte
Chip Density
512Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
3.6A
Number Of Elements
36
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Memory Type
DDR SDRAM
Memory Size
2GB
Speed
400MT/s
Features
-
Package / Case
184-RDIMM
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT36VDDF25672Y-40BF3
Manufacturer:
IXYS
Quantity:
219
Serial Presence-Detect
Table 15:
Table 16:
Serial Presence-Detect Data
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current: SCL = SDA = V
Power supply current: SCL clock frequency = 100 kHz
Parameter/Condition
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA fall time
SDA rise time
Data-in hold time
Start condition hold time
Clock HIGH period
Clock LOW period
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM DC Operating Conditions
Serial Presence-Detect EEPROM AC Operating Conditions
Notes:
OUT
IN
= 3mA
OUT
= GND to V
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
For the latest serial presence-detect data, refer to Micron’s SPD page:
www.micron.com/SPD.
= GND to V
DD
the falling or rising edge of SDA.
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
- 0.3V; All other inputs = V
DD
DD
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
17
SS
or V
DD
t
t
Symbol
t
t
t
WRC) is the time from a valid stop condition of a write
t
HD:DAT
t
HD:STA
SU:DAT
SU:STA
SU:STO
t
t
t
HD:DI
t
HIGH
LOW
f
WRC
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BUF
SCL
AA
t
t
R
F
Symbol
V
DDSPD
V
V
V
I
I
I
I
LO
SB
CC
OL
LI
IH
IL
Min
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
–
–
0
–
–
V
DDSPD
Min
–1.0
2.3
Serial Presence-Detect
–
–
–
–
–
Max
300
300
400
0.9
× 0.7
–
–
–
–
–
–
–
–
–
5
©2002 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Units
kHz
Max
ms
µs
µs
ns
ns
ns
µs
µs
µs
µs
ns
µs
µs
3.6
0.4
2.0
10
10
30
+ 0.5
× 0.3
Notes
Units
1
2
2
3
4
mA
µA
µA
µA
V
V
V
V