MT18HTF51272AY-667A1 Micron Technology Inc, MT18HTF51272AY-667A1 Datasheet - Page 10

• Manufacturer Part Number: MT18HTF51272AY-667A1
• Manufacturer: Micron Technology Inc

Specifications of MT18HTF51272AY-667A1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 72b
• Organization: 512Mx72
• Total Density: 4GByte
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.593A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 12:
PDF: 09005aef80e8ad4d/Source: 09005aef80e785e6
HTF18C64_128_256_512x72A.fm - Rev. H 5/08 EN
Parameter/Condition
Operating one bank active-precharge current:
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
t
valid commands; Address bus inputs are switching; Data pattern is same
as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching; Data
bus inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current:
t
Other control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during DESELECTs; Data bus inputs are switching
RC =
RAS =
CK =
RAS =
RAS =
RFC (I
CK =
DD
DD
),
t
4W
t
t
t
DD
RC (I
CK (I
RP =
CK (I
t
t
t
OUT
OUT
RAS MIN (I
RAS MAX (I
RAS MAX (I
) interval; CKE is HIGH, S# is HIGH between valid commands;
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
t
RP (I
),
); CKE is LOW; Other control and address bus
DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the
512Mb (64 Meg x 8) component data sheet
),
t
t
RAS =
RC =
DD
DD
DD
Notes:
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands;
DD
DD
),
t
),
),
RC (I
DD
t
t
RAS MIN (I
RCD =
t
t
RP =
RP =
t
CK =
Specifications and Conditions – 1GB
DD
1. Value calculated as one module rank in this operating condition and all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
),
512MB, 1GB, 2GB, 4GB (x72, DR, ECC) 240-Pin DDR2 SDRAM UDIMM
CK =
DD
t
t
t
RP (I
RP (I
t
RCD (I
t
CK (I
in I
RRD =
), AL = 0;
DD
DD
t
DD
DD
CK (I
DD
DD
DD
); CKE is HIGH, S# is HIGH between
DD
2P (CKE LOW).
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
), AL = 0;
), AL =
t
); REFRESH command at every
RRD (I
); CKE is HIGH, S# is HIGH between
DD
t
CK =
),
t
RC =
DD
t
RCD (I
t
CK (I
),
t
CK =
t
t
t
RCD =
RC (I
CK =
t
DD
DD
t
CK =
CK =
t
CK (I
),
) - 1 ×
DD
t
t
CK (I
t
RAS =
RCD (I
t
),
t
OUT
t
CK (I
CK =
t
CK (I
DD
CK =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
10
t
DD
),
CK (I
= 0mA;
DD
DD
DD
t
t
),
RAS MAX
CK (I
t
CK (I
),
); CKE is
); CKE is
DD
);
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
);
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
1
1
2
2
1
2
2
2
2
1
2
1
1,098 1,008
1,260 1,170
1,818 1,593 1,323 1,098
1,908 1,683 1,368 1,098
4,140 3,240 3,060 2,970
2,763 2,223 2,088 2,043
-80E/
-800
963
126
900
990
720
216
126
Electrical Specifications
-667
873
126
810
900
630
216
126
©2003 Micron Technology, Inc. All rights reserved.
-53E
783
918
126
720
810
540
216
990
126
-40E
783
873
126
630
720
450
216
810
126
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA