CY7C277-40WMB Cypress Semiconductor Corp, CY7C277-40WMB Datasheet - Page 2

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CY7C277-40WMB

Manufacturer Part Number
CY7C277-40WMB
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C277-40WMB

Density
256Kb
Organization
32Kx8
Access Time (max)
20ns
Operating Current
130mA
Interface Type
Parallel
Package Type
Windowed CDIP
Operating Temperature Classification
Military
Operating Supply Voltage (typ)
5V
Operating Temp Range
-55C to 125C
Pin Count
28
Mounting
Through Hole
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Lead Free Status / RoHS Status
Not Compliant

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Functional Description
The CY7C277 is a high-performance 32K word by 8-bit CMOS
PROMs. It is packaged in the slim 28-pin 300-mil package.
The ceramic package may be equipped with an erasure
window; when exposed to UV light, the PROM is erased and
can then be reprogrammed. The memory cells utilize proven
EPROM floating-gate technology and byte-wide algorithms.
The CY7C277 offers the advantages of low power, superior
performance, and high programming yield. The EPROM cell
requires only 12.5V for the supervoltage and low current
requirements allow for gang programming. The EPROM cells
allow for each memory location to be 100% tested, as each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each PROM is also tested for AC perfor-
mance to guarantee that the product will meet DC and AC
specification limits after customer programming.
On the CY7C277, the outputs are pipelined through a
master-slave register. On the rising edge of CP, data is loaded
into the 8-bit edge triggered output register. The E/E
provides a programmable bit to select between asynchronous
and synchronous operation. The default condition is
asynchronous. When the asynchronous mode is selected, the
E/E
synchronous mode is selected, the E/E
rising edge of CP to enable and disable the outputs. The
7C277 also provides a programmable bit to enable the
Address Latch input. If this bit is not programmed, the device
will ignore the ALE pin and the address will enter the device
asynchronously. If the ALE function is selected, the address
Electrical Characteristics
Document #: 38-04006 Rev. *B
V
V
V
V
I
V
I
I
I
V
I
V
V
Notes:
IX
OZ
OS
CC
PP
1.
2.
3.
4.
5.
6.
Parameter
OH
OL
IH
IL
CD
PP
IHP
ILP
S
The voltage on any input or I/O pin cannot exceed the power pin during power-up.
T
See the last page of this specification for Group A subgroup testing information.
See “Introduction to CMOS PROMs” in this Book for general information on testing.
For devices using the synchronous enable, the device must be clocked after applying these voltages to perform this measurement.
For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
pin operates as an asynchronous output enable. If the
A
is the “instant on” case temperature.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Leakage Current
Input Clamp Diode Voltage
Output Leakage Current
Output Short Circuit Current
Power Supply Current
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
Description
Over the Operating Range
S
pin is sampled on the
V
V
Guaranteed Input Logical HIGH
Voltage for All Inputs
Guaranteed Input Logical LOW
Voltage for All Inputs
GND < V
0 < V
V
V
I
OUT
CC
CC
CC
CC
S
input
= Min., I
= Min., I
= Max., V
= Max., CS > V
= 0 mA
OUT
Test Conditions
IN
< V
[3, 4]
< V
OH
OL
CC
OUT
enters the PROM while the ALE pin is active, and is captured
when ALE is deasserted. The user may define the polarity of
the ALE signal, with the default being active HIGH.
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
Ambient Temperature with
Power Applied
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
DC Program Voltage (Pins 7, 18, 20) ........................... 13.0V
UV Erasure................................................... 7258 Wsec/cm
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
CC
Commercial
Military
= 8.0 mA
, Output Disabled
= 2.0 mA
= 0.0V
IH
Range
[2]
Commercial
Military
[6]
[5]
Ambient Temperature
55 C to +125 C
Min.
[1]
0 C to +70 C
2.4
2.0
3.0
7C277-30
12
10
40
20
Max.
V
+40
120
0.4
0.8
0.4
13
50
10
90
CC
Note 4
Min.
2.4
2.0
3.0
12
10
40
20
7C277-40
65 C to +150 C
55 C to +125 C
CY7C277
0.5V to +7.0V
0.5V to +7.0V
3.0V to +7.0V
Max.
V
+10
+40
130
0.4
0.8
0.4
13
50
5V 10%
5V 10%
90
CC
Page 2 of 8
V
CC
Unit
mA
mA
mA
V
V
V
V
V
V
V
A
A
2

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