CY7C276-30JI Cypress Semiconductor Corp, CY7C276-30JI Datasheet - Page 3

• Manufacturer Part Number: CY7C276-30JI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C276-30JI

• Lead Free Status / RoHS Status: Not Compliant

AC Test Loads and Waveforms
Switching Characteristics
Erasure Characteristics
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 Angstroms for a minimum dose (UV inten-
sity multiplied by exposure time) of 25 Wsec/cm2. For an ul-
traviolet lamp with a 12 mW/cm
time would be approximately 35 minutes. The 7C276 needs to
be within 1 inch of the lamp during erasure. Permanent dam-
OUTPUT
t
t
t
t
t
Equivalent to: THÉ VENIN EQUIVALENT
AA
CSOV
CSOZ
OEV
OEZ
Parameter
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
50 pF
Address to Output Data Valid
CS Active to Output Valid
CS Inactive to High Z Output
OE Active to Output Valid
OE Inactive to High Z Output
(a) Normal Load
R1 500
(658 MIL)
200
Description
R2
333
(403
MIL)
(250 MIL)
2
power rating the exposure
Over the Operating Range
OUTPUT
2.0V
INCLUDING
JIG AND
SCOPE
(1.9V Mil)
5V
5 pF
(b) High Z Load
R1 500
(658 MIL)
Min.
C276–5
CY7C276-25
[3,4]
3
C276–3
R2
333
(403
MIL)
Max.
age may result if the EPROM is exposed to high-intensity UV
light for an extended period of time. 7258 Wsec/cm
recommended maximum dosage.
Wavelengths of light less than 4000 Angstroms begin to erase
the 7C276 in the windowed package. For this reason, an
opaque label should be placed over the window if the EPROM
is exposed to sunlight or fluorescent lighting for extended pe-
riods of time.
25
13
13
11
11
GND
3.0V
Min.
CY7C276-30
< 3 ns
Max.
30
15
15
12
12
10%
90%
ALL INPUT PULSES
Min.
CY7C276-35
Max.
35
18
18
15
15
CY7C276
90%
Unit
2
ns
ns
ns
ns
ns
10%
C276–4
is the
< 3 ns