07/07/03
DESCRIPTION
A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. The 4N22A, 4N23A, and 4N24A differ from the 4N22, 4N23, and 4N24 only in that the
collector of the transistor is isolated from the case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage ........................................................................................................................................................ 1kV
Emitter-Collector Voltage..........................................................................................................................................................4V
Collector-Emitter Voltage........................................................................................................................................................35V
Collector-Base Voltage ...........................................................................................................................................................35V
Reverse Input Voltage .............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (see note 1) ....................................40mA
Peak Forward Input Current (Value applies for tw 1 s PRR 300 pps) ..............................................................................1A
Continuous Collector Current ..............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW
Storage Temperature..........................................................................................................................................-65°C to +125°C
Operating Free-Air Temperature Range.............................................................................................................-55°C to +125°C
Lead Solder Temperature (10 seconds max., 1/16” from case) ........................................................................................ 240°C
Notes:
1.
2.
Ø0.335 [8.51]
Ø0.305 [7.75]
Features:
4N22A
4N23A
4N24A
Derate linearly to 125°C free-air temperature at the rate of 0.40 mA/°C above 65°C.
Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.
JEDEC registered data
0.500 [12.70] MIN
Qualified to MIL-PRF-19500/486
Collector is electrically isolated from the case
Overall current gain: 1.5 typical (4N24A)
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
0.185 [4.70]
0.155 [3.94]
JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS
ALL LINEAR DIMENSIONS ARE IN INCHES [MILLIMETERS].
0.040 [1.02] MAX
Package Dimensions
Ø0.370 [9.40]
Ø0.336 [8.53]
www.micropac.com
0.034 [0.86]
0.028 [0.71]
Ø0.019 [0.48]
Ø0.016 [0.41]
Ø0.200 [5.08]
6 LEADS
45°
7
E-MAIL: OPTOSALES @ MICROPAC.COM
6
1
5
Applications:
2
3
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
0.045 [1.14]
0.029 [0.73]
A 5
K 7
THE COLLECTOR OF THE TRANSISTOR IS
ISOLATED FROM THE CASE.
Schematic Diagram
OPTOELECTRONIC PRODUCTS
COLLECTOR IS COMMON TO CASE.
MICROPAC
DIVISION
3 C
1 E
2 B