EESF5 Omron, EESF5 Datasheet - Page 2

EESF5

Manufacturer Part Number
EESF5
Description
Manufacturer
Omron
Type
Reflectiver
Datasheet

Specifications of EESF5

Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
4V
Collector-emitter Voltage
30V
Forward Current
50mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
30000ns
Rise Time
30000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 80C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
■ Engineering Data
236
Forward Current vs. Collector
Dissipation Temperature Rating
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Sensing Distance Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Angle deviation θ (°)
Photomicrosensor (Reflective)
Ta = 25°C
Sensing object: White paper
with a reflection factor of 90%
V
Distance d (mm)
CE
= 10 V
Sensing object: White paper
with a reflection factor of 90%
d = 5 mm
Ta = 25°C
I
V
F
I
V
CE
F
= 20 mA
CE
= 20 mA
= 10 V
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
EE-SF5(-B)
Ambient temperature Ta (°C)
Sensing object:
White paper with a
reflection factor of
90%
V
0lx
Ta = 25°C
V
d = 5 mm
Sensing object: White
paper with a reflection
factor of 90%
Angle deviation θ (°)
I
V
Ta = 25°C
(a) : d
(b) : d
CE
CE
F
CE
Forward current I
= 20 mA
= 10 V
= 10 V
= 5 V
1
1
Distance d
= 3 mm
= 5 mm
Sensing
object
2
Ta = 25°C
I
V
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
F
CE
(mm)
= 20 mA
F
= 10 V
(mA)
d
1
Output
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Input
Input
Collector−Emitter voltage V
Ta = 25°C
Sensing object:
White paper with
a reflection factor
of 90%
d = 5 mm
I
V
Ta = 25°C
d
Sensing
object: White
paper with a
reflection
factor of 90%
F
1
CE
= 20 mA
Load resistance R
= 5 mm
= 5 V
Distance d
90 %
10 %
I
I
d
5 mm
F
F
1
I
F
2
= 40 mA
= 30 mA
=
= 20 mA
I
(mm)
F
Phototransistor side
LED side
= 10 mA
V
Ta = 25°C
CC
L
Output
(kΩ)
= 5 V
CE
(V)

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