GP2S40J0000F Sharp Electronics, GP2S40J0000F Datasheet - Page 2

• Manufacturer Part Number: GP2S40J0000F
• Manufacturer: Sharp Electronics
• Type: Reflectiver

Specifications of GP2S40J0000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: Ultra Compact DIP
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 150000ns
• Rise Time: 150000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

2 No reflective object
3 “ d” is glass thickness of reflective mirror.
Input
Output
Transfer
chara
cteristics
Fig. 1 Forward Current vs. Ambient
Test Arrangement of Collector Current
Electro-optical Characteristics
60
50
40
30
20
10
- 25
0
Temperature
3
2
Forward voltage
Reverse current
Collector dark current
Collector current
Response time
Leak current
0
Ambient temperature T
Parameter
25
Al evaporation
50
Rise time
Fall time
a
( ˚C )
75
4mm-thick glass
85
100
Symbol
I
I
LEAK
V
CEO
I
I
t
t
R
C
f
r
F
I
V
V
V
V
V
R
F
L
R
CE
CE
CE
CE
= 20mA
= 1 000 , d = 4mm
= 3V
= 20V
= 5V, I
= 5V, I
= 2V, I
Fig. 2 Power Dissipation vs.
Condition
100
120
80
75
60
40
20
C
F
F
0
- 25
= 100 A
Ambient Temperature
= 20mA
= 20mA
0
Ambient temperature T
P
P, P
tot
c
25
MIN.
0.5
-
-
-
-
-
-
50
TYP.
1.2
50
50
1
-
-
-
a
( ˚C )
75
MAX.
85
100
500
150
150
1.4
3.0
10
( Ta = 25˚C )
100
GP2S40
Unit
mA
nA
nA
V
A
s
s