GP2S09 Sharp Electronics, GP2S09 Datasheet - Page 4

• Manufacturer Part Number: GP2S09
• Manufacturer: Sharp Electronics
• Type: Reflectiver

Specifications of GP2S09

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: PDIP
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 100000ns
• Rise Time: 100000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -20C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

Fig. 7 Collector Dark Current vs.
Fig. 9 Response Time vs. Load Resistance
Fig.10 Relative Collector Current vs.
10
1000
10
10
10
10
500
200
100
100
- 10
0.5
0.2
0.1
60
40
80
20
50
20
10
Distance between sensor and Al evaporation glass d ( mm )
- 6
- 7
- 8
- 9
0.1
Ambient Temperature
0
5
2
1
5
2
5
2
5
2
5
2
Distance between Sensor and
Al Evaporation Glass
0
0
V
V
I
T
CE
C
a
CE
= 100 A
= 25˚C
= 20V
= 2V
( GP2S24/ GP2S26/GP2S27 )
1
Ambient temperature T
25
Load resistance R
1
2
t
d
50
10
t
r
L
3
t
s
( k )
t
a
f
( ˚C )
75
V
100
I
T
F
a
CE
= 4mA
4
= 25˚C
= 2V
100
1000
5
Input
Fig. 8 Response Time vs. Load Resistance
Fig.11 Relative Collector Current vs.
R
D
100
100
0.5
0.2
0.1
60
40
80
20
50
20
10
5
2
1
0.01
0
Card Moving Distance ( 1 )
Test Circuit for Response Time
V
I
T
V
C
0.02 0.05
a
GP2S09/GP2S24/GP2S26/GP2S27
CE
CC
= 100 A
= 25˚C
R
= 2V
L
Output
Card moving distance L ( mm )
0
Load resistance R
0.1 0.2
1
Input
Output
2
0.5
3
L
t
d
( k
1
4
t
t
s
I
V
T
r
d = 1mm
( GP2S09 )
F
a
)
CE
2
= 4mA
= 25˚C
5
t
t
d
= 2V
r
t
s
6
5
t
f
10
7
t
f
10%
90%