SAA7706H/N107 NXP Semiconductors, SAA7706H/N107 Datasheet - Page 40

SAA7706H/N107

Manufacturer Part Number
SAA7706H/N107
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of SAA7706H/N107

Operating Temperature (min)
-40C
Operating Temperature (max)
85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant

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Quantity
Price
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Manufacturer:
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Manufacturer:
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Quantity:
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Philips Semiconductors
13 RDS AND I
T
2001 Mar 05
C
AC
V
(THD + N)/S
S/N
PSRR
Oscillator; T
f
V
I
RDS timing (see Figs 18 and 19)
f
t
T
t
t
t
t
xtal
DD(OSC)
amb
RDSCLK
su
HC
LC
h
w
V
cy
o(RMS)
cs
xtal
L
Car radio Digital Signal Processor (DSP)
SYMBOL
SYMBOL
o
CHARACTERISTICS
= 25 C; V
amb
2
DDD
S-BUS TIMING
load capacitance
output voltage (RMS
value)
unbalance between
channels
total harmonic
distortion-plus-noise to
signal ratio (measured
with system one)
signal-to-noise ratio
(measured with system
one)
channel separation
power supply rejection
ratio
crystal frequency
voltage across the crystal
supply current crystal
oscillator
nominal RDS clock frequency
clock set-up time
cycle time
clock HIGH time
clock LOW time
data hold time
wait time
= 25 C; V
= 3.3 V; unless otherwise specified.
PARAMETER
PARAMETER
DD(OSC)
= 3.3 V
at 0 dB
at 60 dB; A-weighted
code = 0; A-weighted
f
crystal series resistance
R
capacitance C
crystal load capacitance
C
(see Fig.13)
at start-up
at oscillation
ripple
s
L
< 100 ; crystal shunt
= 12 pF; C
direct output mode
direct output mode
buffer mode
direct output mode
buffer mode
direct output mode
buffer mode
buffer mode
= 1 kHz; V
CONDITIONS
CONDITIONS
40
1
p
= C
ripple(p-p)
< 7 pF;
2
= 22 pF
= 1%
1.6
1.7
100
2
220
1
220
1
100
1
MIN.
MIN.
1000
0.1
105
80
50
11.2896
2.6
3.4
0.32
1187.5
842
90
37
TYP.
TYP.
Product specification
200
3.6
6.4
640
640
SAA7706H
85
MAX.
MAX.
pF
mV
dB
dB
dB
dB
dB
dB
MHz
V
mA
mA
Hz
s
s
s
s
s
s
s
s
s
UNIT
UNIT

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