UM6202B MICROSEMI, UM6202B Datasheet

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UM6202B

Manufacturer Part Number
UM6202B
Description
Manufacturer
MICROSEMI
Type
Attenuator/Switchr
Datasheet

Specifications of UM6202B

Configuration
Single
Power Dissipation
2W
Package Type
Style B
Mounting
Through Hole
Pin Count
2
Applications Frequency Range
UHF
Lead Free Status / RoHS Status
Not Compliant
Lead Free Status / RoHS Status
Not Compliant
Copyright  2005
Rev. 0, 2006-03-13
Package
applications requiring small package size
and moderate average power handling
capability. The low capacitance of the
UM6000 and UM6600 allows them to be
used as series switching elements to 1 GHz.
The low resistance of the UM6200 is useful
in applications where forward bias current
must be minimized.
lifetime the UM6000 and UM6600 have
been used in distortion sensitive and high
peak power applications, including receiver
protectors, TACN, and IFF equipment.
Their low capacitance allows them to be
useful as attenuator diodes at frequencies
greater than 1 GHz. The UM6200 has been
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
A & C 25
B & E ½ in. total length to 25
These series of PIN diodes are designed for
Because of its thick I-region width and long
Reverse Voltage @ 10 uA
SM
All
Free Air
25
1 us pulse (Single)
O
O
1000
C Pin Temperature
C End Cap Temperature
100
200
400
800
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Condition
VOLTAGE RATINGS
O
D E S C R I P T I O N
C Contact
UM6001
UM6002
UM6006
UM6010
-
used successfully in switches in which low
insertion loss at low bias current is required.
smallest Microsemi PIN diode package. It has
been used successfully in many microwave
applications using coaxial, microstrip, and
stripline techniques at frequencies beyond X-
Band. The “B” and “E” style leaded packages
offer the highest available power dissipation for a
package this small. They have been used
extensively as series switch elements in
microstrip circuits. The “C” style package
duplicates the physical outline available in
conventional ceramic-metal packages but
incorporates the many reliability advantages of
the Microsemi construction.
The “A” style package for this series is the
4.5 W
2.5 W
UM6000/UM6600
6 W
UM6000 25 kW
PD
UM6600 13 kW
0.5 W
27.5
UM6201
UM6202
UM6204
25
60
Microsemi
O
O
-
-
O
C/W
C/W
C/W
θ
3.0 W 42.5
PD
4 W 37.5
2.0 W 75
UM6200
UM6000 / UM6200/UM6600
10 kW
UM6601
UM6602
UM6606
UM6610
0.5 W
-
o
o
o
C/W
C/W
θ
C/W
POWER PIN DIODES
Voltage ratings to 1000V
Average power dissipation to 6 W
Series resistance as low as 0.4 Ω
Carrier lifetime greater than 1.0 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
Low conductance at 0 V bias
Compatible with automatic insertion
equipment
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX6001B, etc.
APPLICATIONS/BENEFITS
K E Y F E A T U R E S
Page 1

Related parts for UM6202B

UM6202B Summary of contents

Page 1

... TACN, and IFF equipment. Their low capacitance allows them to be useful as attenuator diodes at frequencies greater than 1 GHz. The UM6200 has been IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Package ...

Page 2

... 0 100 100 MHz 300k 1.0 150 Style “B” Style “SM” UM6000/UM6200/UM6600 Rs versus 100 MHz UM6600 2 UM6000 UM6200 (A) Microsemi POWER PIN DIODES UM6000 UM6200 Units 10 10 1.7 0.4 Ohms 0.5 1.1 300k 350k Ohms 1.0 0.6 150 Page 2 ...

Page 3

... Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 UM6000/UM6200/UM6600 FORWARD VOLTAGE versus CURRENT UM6200 - 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE UM6000/UM6600 Rp versus (Volts) Microsemi POWER PIN DIODES UM6000 UM6600 1.0 1.2 1 100 MHz f = 500 MHz GHz GHz Page 3 ...

Page 4

... Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 UM6200 Rp versus (Volts) UM6000 Ct versus MHz MHz MHz f => 100 MHz 10 Vr (Volts) Microsemi POWER PIN DIODES f = 100 MHz f = 500 MHz GHz GHz 3 10 100 250 Page 4 ...

Page 5

... Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 UM6200 Ct versus MHz MHz f = 100 MHz f = 500 MHz (Volts) UM6600 Ct versus MHz MHz MHz f = 100 MHz (Volts) Microsemi POWER PIN DIODES 100 100 Page 5 ...

Page 6

... MAX POWER DISSIPATION versus LEAD TEMPERATURE 5.0 4 1/4" 3 3/8" 1/2" 2 5/8" 3/4" 1.0 0.0 0 Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 UM6000/UM6200 100 125 o T LEAD TEMPERATURE ( C) L UM6600 100 125 o T LEAD TEMPERATURE ( C) L Microsemi POWER PIN DIODES 150 175 150 175 Page 6 ...

Page 7

... PULSE THERMAL IMPEDANCE VS PULSE WIDTH Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 UM6000/UM6200/UM6600 UM6000 AND UM6200 SERIES UM6600 - 100 o TEMPERATURE ( C) (OFONE METAL PIN) UM6000/UM6200/UM6600 UM6200 UM6000 ------UM6600 - PULSE WIDTH (SEC) Microsemi POWER PIN DIODES 125 150 175 - Page 7 ...

Page 8

... STYLE “A” STYLE “C” Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 POWER PIN DIODES STYLE “B” STYLE “E” STYLE “D” Microsemi Page 8 ...

Page 9

... UM6000/UM6200/UM6600 STYLE “SM” FOOTPRINT Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 POWER PIN DIODES UM6000/UM6200/UM6600 Microsemi Page 9 ...

Page 10

... If the mounting method chosen requires use of an adhesive separate from the solder compound, a round (or square) spot of cement as shown should be centrally located. Copyright  2005 Rev. 0, 2006-03-13 UM6000 / UM6200/UM6600 POWER PIN DIODES NOTES: Microsemi Page 10 ...

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