1N4448W-7-F Diodes Zetex, 1N4448W-7-F Datasheet - Page 2

• Manufacturer Part Number: 1N4448W-7-F
• Manufacturer: Diodes Zetex

Specifications of 1N4448W-7-F

• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 75V
• Avg. Forward Curr (max): 0.25
• Rev Curr: 2.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25@0.15AV
• Operating Temp Range: -65C to 150C
• Package Type: SOD-123
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Compliant

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Peak Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes:
1N4448W
Document number: DS12002 Rev. 18 - 2
100
4. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
500
400
300
200
0
0
25
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Derating Curve
Characteristic
Characteristic
Characteristic
@T
50
A
= 25°C unless otherwise specified
75
@T
R
θJA
A
= 25°C unless otherwise specified
100
= 315°C/W
@ t = 1.0μs
125
@ t = 1.0s
°
150
www.diodes.com
Symbol
2 of 4
V
V
(BR)R
I
C
RM
t
FM
rr
T
Symbol
Symbol
T
V
V
J
V
R(RMS)
I
R
V
, T
I
FSM
RWM
V
P
RRM
FM
I
RM
θ JA
O
R
D
STG
100
0.1
0.62
10
Min
75
⎯
⎯
⎯
⎯
⎯
⎯
1
0
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
0.855
Fig. 2 Typical Forward Characteristics
Max
0.72
1.25
1.0
2.5
4.0
4.0
50
30
25
⎯
200
-65 to +150
Value
Value
Unit
100
500
250
400
315
400
4.0
1.0
μA
μA
μA
nA
pF
75
53
ns
V
V
I
I
I
I
I
V
V
V
V
V
I
I
R
F
F
F
F
F
rr
600
R
R
R
R
R
= 0.1 x I
= 5.0mA
= 10mA
= 100mA
= 150mA
= I
= 10μA
= 75V
= 75V, T
= 25V, T
= 20V
= 0, f = 1.0MHz
R
= 10mA,
Test Condition
R
, R
800
J
J
= 150°C
= 150°C
L
1N4448W
© Diodes Incorporated
= 100Ω
°C/W
November 2010
Unit
Unit
mW
mA
mA
°C
V
V
V
A
1,000